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公开(公告)号：SG70139A1
公开(公告)日：2000-01-25
申请号：SG1998005021
申请日：1998-11-27
Applicant: IBM
IPC: H01L21/223 , H01L21/265 , H01L21/336 , H01L29/417 , H01L21/8249
Abstract: A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.
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