-
公开(公告)号：WO02059882A2
公开(公告)日：2002-08-01
申请号：PCT/EP0115254
申请日：2001-12-21
Applicant: IBM , IBM DEUTSCHLAND
Inventor： HSIAO RICHARD , ROBERTSON NEIL LESLIE , WEBB PATRICK RUSH
CPC classification number: G11B5/3163 , G11B5/3116 , G11B5/313 , G11B5/3133 , Y10T29/4906
Abstract: Electroplated components of magnetic head (100, 150) are fabricated utilizing a seed layer (112, 160) that is susceptible to reactive ion etch removal techniques. The seed layer is comprised of tungsten or titanium is fabricated by sputter deposition, is electrically conductive wherein electroplated components, such as induction coil members (104) and magnetic poles (188), are effectively electroplated into photolithographically created photoresist trenches (108, 180) that are fabricated upon the seed layer. Following the electroplating, the photoresist layer is removed utilizing standard wet chemical process. Utilizing a fluorine species reactive ion etch process the seed layer is removed, significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. Included is an enhanced two part seed layer (138), where the lower part (112) is tungsten, titanium or tantalum, the upper part (140) is composed of material that constitutes the component to be electroplated.
Abstract translation: 使用对反应离子蚀刻去除技术敏感的种子层（112,160）制造磁头（100,150）的电镀部件。 种子层由钨或钛组成，通过溅射沉积制造，是导电的，其中诸如感应线圈构件（104）和磁极（188）的电镀部件有效地电镀到光刻创建的光致抗蚀剂沟槽（108,180）中， 在种子层上制造。 在电镀之后，使用标准的湿法化学方法去除光致抗蚀剂层。 利用氟物质反应离子蚀刻工艺，除去种子层，显着地，氟RIE工艺产生气态钨或氟化钛化合物去除产物。 由于气态氟化物不再沉积，克服了沿着电镀部件侧面的种子层再沉积的问题。 包括增强的两部分种子层（138），其中下部（112）是钨，钛或钽，上部（140）由构成要被电镀的部件的材料构成。
-
公开(公告)号：DE69615456T2
公开(公告)日：2002-05-02
申请号：DE69615456
申请日：1996-05-24
Applicant: IBM
Inventor： HUGHBANKS TIMOTHY SCOTT , ROBERTSON NEIL LESLIE , VOLDMAN STEVEN HOWARD , WALLASH ALBERT JOHN
Abstract: A magneto-resistive read head (107) having a "parasitic shield" (124) provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head (107). The parasitic shield (124) is provided in close proximity to a conventional magnetic shield (113, 115). The electrical potential of parasitic shield (124) is held essentially equal to the electrical potential of the sensor element (111). If charges accumulate on the conventional shield (113, 115), current will flow to the parasitic shield (124) at a lower potential than would be required for current to flow between the conventional shield (113, 115) and the sensor element (111). Alternatively, conductive spark gap devices (203, 206) are electrically coupled to sensor element leads and to each magnetic shield (201, 202). Each spark gap (203, 206) device is brought within very close proximity of the substrate (207) to provide an alternative path for charge that builds up between the sensor element (213) and the substrate (207) to be discharged. The ends of the spark gaps (203, 206) that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device (203, 206) and the substrate (207).
-
公开(公告)号：SG51705A1
公开(公告)日：1998-09-28
申请号：SG1996007295
申请日：1996-04-04
Applicant: IBM
Inventor： HUGHBANKS TIMOTHY SCOTT , ROBERTSON NEIL LESLIE , VOLDMAN STEVEN HOWARD , WALLASH ALBERT JOHN
Abstract: A magneto-resistive read head (107) having a "parasitic shield" (124) provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head (107). The parasitic shield (124) is provided in close proximity to a conventional magnetic shield (113, 115). The electrical potential of parasitic shield (124) is held essentially equal to the electrical potential of the sensor element (111). If charges accumulate on the conventional shield (113, 115), current will flow to the parasitic shield (124) at a lower potential than would be required for current to flow between the conventional shield (113, 115) and the sensor element (111). Alternatively, conductive spark gap devices (203, 206) are electrically coupled to sensor element leads and to each magnetic shield (201, 202). Each spark gap (203, 206) device is brought within very close proximity of the substrate (207) to provide an alternative path for charge that builds up between the sensor element (213) and the substrate (207) to be discharged. The ends of the spark gaps (203, 206) that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device (203, 206) and the substrate (207).
-
公开(公告)号：DE69615456D1
公开(公告)日：2001-10-31
申请号：DE69615456
申请日：1996-05-24
Applicant: IBM
Inventor： HUGHBANKS TIMOTHY SCOTT , ROBERTSON NEIL LESLIE , VOLDMAN STEVEN HOWARD , WALLASH ALBERT JOHN
Abstract: A magneto-resistive read head (107) having a "parasitic shield" (124) provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head (107). The parasitic shield (124) is provided in close proximity to a conventional magnetic shield (113, 115). The electrical potential of parasitic shield (124) is held essentially equal to the electrical potential of the sensor element (111). If charges accumulate on the conventional shield (113, 115), current will flow to the parasitic shield (124) at a lower potential than would be required for current to flow between the conventional shield (113, 115) and the sensor element (111). Alternatively, conductive spark gap devices (203, 206) are electrically coupled to sensor element leads and to each magnetic shield (201, 202). Each spark gap (203, 206) device is brought within very close proximity of the substrate (207) to provide an alternative path for charge that builds up between the sensor element (213) and the substrate (207) to be discharged. The ends of the spark gaps (203, 206) that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device (203, 206) and the substrate (207).
-
-
-
Search Results
4
records
(took 0.016 seconds)
