公开(公告)号：US3753809A

公开(公告)日：1973-08-21

申请号：US3753809D

申请日：1970-01-09

Applicant: IBM

Inventor： ROY M ,  GAIER C ,  GROCHOWSKI E

IPC: H01L21/22 ,  C30B31/16 ,  H01L21/00 ,  H01L7/44

CPC classification number: C30B31/16 ,  H01L21/00 ,  Y10S438/935

Abstract: A selected source concentration of POCl3 is passed over a plurality of wafers in a furnace in a turbulent flow by positioning baffles between the source of the concentration and the wafers and a baffle on the side of the wafers remote from the source. This turbulent flow produces substantial uniformity of the phosphorous concentration in each of the wafers. By selecting the source concentration of POCl3 in accordance with the flow rate, a substantially straight junction is formed in each of the wafers by the diffusion of the phosphorous into the wafers.

Abstract translation: 通过在浓缩源和晶片之间定位挡板和远离源的晶片侧的挡板，使POCl 3的选定源浓度在炉中以湍流流过多个晶片。 这种湍流在每个晶片中产生磷浓度的显着均匀性。 通过根据流速选择POCl 3的源浓度，通过磷扩散到晶片中，在每个晶片中形成基本上直的结。