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    1.
    发明专利
    未知

    公开(公告)号：DE1290638B

    公开(公告)日：1969-03-13

    申请号：DEI0023935

    申请日：1963-06-24

    Applicant: IBM

    Inventor： MERRITT BROWNLOW JAMES ,  RUDOLPH GREBE KURT

    IPC: G11B5/64 ,  G11B5/70 ,  G11B5/702 ,  G11C11/06 ,  H01F41/16 ,  G11C11/04

    Abstract: 997,326. Magnetic storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 26, 1963 [June 29, 1962], No. 25327/63. Heading H3B. [Also in Division HI] A magnetic storage array is manufactured by coating conductive wires with successive layers of wax and a ferrite resin mixture, mounting the wires in parallel alignment in two open frames, orienting the frames so that the wires are orthogonal, pressing the frames together so that the wire coatings adhere, cutting the wires away from the frames after partial curing has taken place and finally sintering the ferrite at higher temperatures. The wax and resin are burnt away during the sintering process, the wax providing a space between the wires and the surrounding ferrite which prevents fracturing of the magnetic material. The co-ordinate wires may be positioned either as shown in Fig. 1A or Fig. 2, the latter arrangement providing a web of ferrite 3 between the wires 4, 5 at each crossing point. Where more than one wire is provided in each co-ordinate at each crossing point, these wires are insulated and twisted together in Fig. 3 (not shown). Depending on the materials used, the suggested temperatures for the process are 25-150‹ C. for partial curing, increasing to 100-150‹ C. to melt the wax coating. The temperature is then raised, firstly to 600‹ C. to remove the resin and plasticizer and then to 900-1400‹ C. to sinter the ferrite. Annealed platinum, palladium, silver or copper may be used for the wires, and the wax coating may be either natural or synthetic such as beeswax, carnauba wax, polyethylene wax or paraffin wax. Other suitable wax-like substances are polyvinyl acetate, polyvinyl chloride and their copolymers. The ferrite resin comprises 40-80% by weight of calcinated ferrite powder, 5-60% of thermosetting resin plus catalyst and 0-30% of plasticizers. Suitable ferrite powders exhibiting the required rectangular hystesis loop are Fe 1 . 83 Mn 1 . 08 Cu. 09 O 4 , Fe 1 . 68 Mn 1 . 25 Cr. 06 Ni. 03 O 4 , Fe 1 . 7 Mn. 6 Mg. 7 O 4 , and Fe 1 . 65 Mn 0 . 95 Cr. 10 Zn. 25 Cu. 02 O 4 . The resins may be epoxy resins, polyester resins, melamine-formaldehyde resins or phenol aldehyde resins. Suitable catalysts for the resins are described, and examples of various viscosity control agents are given such as pine and castor oils, butyl glycidyl ether or a 1: 1 mixture of methyl ethyl ketone and amyl acetate. A modification is described in which rayon fibres are used instead of certain of the wires, the fibres being burnt out by the heat treatment to provide a hollow ferrite structure through which pluralities of metallic conductors are later threaded.

    2.
    发明专利
    未知

    公开(公告)号：DE1574500A1

    公开(公告)日：1971-08-19

    申请号：DE1574500

    申请日：1968-01-04

    Applicant: IBM

    Inventor： MERRIT BROWNLOW JAMES ,  RUDOLPH GREBE KURT

    IPC: C04B35/26 ,  G11B5/62 ,  H01F1/00 ,  H01F1/117 ,  H01F1/375 ,  H01F10/06 ,  H01F10/14 ,  H01M6/38 ,  G11C5/00

    Abstract: 1,140,178. Magnetic data storage apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 27 Nov., 1967 [13 Jan., 1967], No. 53756/67. Heading H3B. [Also in Division H1] A magnetic film memory device is provided with a flexible keeper comprising a ferrite powder of low magnetic remanence impregnated in a flexible resinous binder. Suitable ferrites have the formulae Ni 0 . 35 Zn 0 . 65 Fe 2 O 3 and Fe 1 . 97 Cu 0 . 4 Zn 0 . 4 Mn 0 . 2 Bi 0 . 03 O 4 . Preferably the keeper is 8 mils thick and consists of at least 84% by weight of ferrite powder. The binder may be a silicone rubber or a latex, methods of making the ferrite powders and the binders, and of constructing the keeper therefrom being described in the specification. The keeper material may be cast directly on to the drive lines in a matrix.

    3.
    发明专利
    未知

    公开(公告)号：DE1564212A1

    公开(公告)日：1970-11-26

    申请号：DE1564212

    申请日：1966-12-16

    Applicant: IBM

    Inventor： ALFRED BARTKUS EDWARD ,  MERRITT BROWNLOW JAMES ,  RUDOLPH GREBE KURT

    IPC: H01F10/10 ,  H01F10/20 ,  H01F41/02

    Abstract: 1,137,288. Magnetic data-storage apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 10 Nov., 1966 [23 Dec.; 1965], No. 50346/66. Heading H3B. [Also in Divisions D1 and H1] A storage device is produced by forming a layer of green magnetic ferrite around a cylindrical substrate, surrounding this layer with a green non-magnetic ferrite, slicing both ferrites, and sintering the slices. The magnetic ferrite may be Fe 1 . 62 Mn 0 . 80 Cu 0 . 45 Zn 0 . 10 Bi 0 . 02 La 0 . 01 O 4 and may be prepared by ball-milling a mixture of Fe, Cu, Zn and Bi oxides, MnCO 3 , and LaFeO 3 , passing it through a 20-mesh screen, calcining at 650‹ C., remilling, passing it through a 325-mesh screen, and drying. The non-magnetic ferrite may be Fe 1 . 2 Mn 0 . 78 Cu 0 . 3 Zn 0 . 7 Bi 0 . 02 0 4 or Fe 0 . 8 Mn 1 . 48 Cu 0 . 2 Zn 0 . 5 Bi 0 . 02 O 4 . A barrier layer, e.g. of Mn 3 O 4 , Cr 2 O 3 , Mn 3 O 4 + Cr 2 O 3 or Mn 3 O 4 +ZnO, may be provided between the two ferrites. The substrate may be a nylon filament which may be coated with a release agent, e.g. colloidal wax in water, and removed by pulling from one end. The magnetic and barrier layers may be applied by passing a continuous length of the filament through a suspension of the material and then passing it twice through an oven (at 70‹ and 80‹ C., using a nitrocellulose-amyl acetate solution, and at 100‹ and 110‹ C., using an epoxy resin solution); this process is repeated five times and the filament is then passed through an oven (at 85‹ or 125‹ C. resp.) 10 times. The structure may then be similarly coated with the non- magnetic ferrite, and a number of such structures cast in a wax or polyethylene block; the filament is then removed, the block sliced, and the wax melted off by heating to 100- 125‹ C. Alternatively, the structures may be cast in a block of the non-magnetic ferrite, which is dried at 90‹ C. in the mould and then at 100‹ C.; the filament is removed; and the block is then sliced either perpendicular to or along the axes of the cores (in the latter case the two halves are turned through 90 degrees before firing). Firing may be effected in a Ni boat coated with Mn 3 O 4 , initially at 600‹ C. to drive off the binder, and then at 920‹ C. The magnetic layer may have an inner diameter of 3 or 4À5 mils.

    4.
    发明专利
    未知

    公开(公告)号：DE1960972A1

    公开(公告)日：1970-07-23

    申请号：DE1960972

    申请日：1969-12-04

    Applicant: IBM

    Inventor： CHANG HSU ,  RUDOLPH GREBE KURT

    IPC: G09F3/06 ,  G11C5/02 ,  G11C11/14 ,  G11C11/15 ,  G11C11/155 ,  G11C11/16 ,  G11C11/56 ,  H01F10/00

    Abstract: 1,250,085. Magnetic storage arrangements. INTERNATIONAL BUSINESS MACHINES CORP. 13 Nov., 1969 [16 Dec., 1968], No. 55562/69. Heading H3B. In a magnetic storage arrangement, a storage location defined by the crossing point of orthogonal conductors 3, 7, comprises a number of thin, magnetically anisotropic films 2, 4, Fig. 1, having different critical switching fields H K , so that by applying a particular sequence of pulses to the conductors each film may be made to store a different bit of a word. In Fig. 1, the films are separated by a non-magnetic material 5, which may be electrically conducting, and each of films 2 is magnetically coupled to a correspondingly disposed and magnetically similar one of films 4. Alternatively, Fig. 4, the films 4 may be replaced by a single film 8 whose cross-sectional area equals the total cross-sectional area of films 2. The magnetic flux paths around the films and conductors may be closed by keepers 15, 16. To write into the structure of Fig. 4, a pulse 17, Fig. 6A, of sufficient magnitude to switch all three films 12, 13 and 14 to the hard direction is applied to word conductor 3, overlapping with a pulse 18 on conductor 7 which establishes a tipping field along the easy axis. When pulse 17 is terminated, the three films have a common direction of magnetization along the easy axis which represents a " 0 " or a " 1 " depending on the polarity of pulse 18. The operation is repeated, using a pulse 19 of such lesser magnitude that only the two most easily switched films are affected, the tipping pulse 20 being shown with a polarity opposite to that of pulse 18. To write into the third film, a smaller pulse 21 is applied on conductor 3, with a coincident pulse 22 on conductor 7. Reading is carried out by reversing the pulse sequence in conductor 3, giving output pulses 26, 27 and 28 in conductor 7. The operations may be speeded up by using a descending or ascending staircase waveform in place of the discrete writing or reading pulses of Fig. 6A, as in Fig. 6B (not shown). A method of making the storage locations in multiple by vapour deposition is described, the films of least H K lying furthest from conductor 3. The films are of Permalloy, and the variation of H K is achieved by choice of cobalt concentration. The films may have different widths, Fig. 3 (not shown).

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