公开(公告)号：US3669732A

公开(公告)日：1972-06-13

申请号：US3669732D

申请日：1969-05-22

Applicant: IBM

Inventor： MIDDELHOEK SIMON ,  SASSO GIOVANNI

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/285 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L7/00

CPC classification number: H01L23/291 ,  C23C14/042 ,  C23F1/02 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28537 ,  H01L21/31662 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A METHOD FOR MAKING A HIGH SPEED FIELD EFFECT TRANSISTOR OF THE PLANAR TYPE WITH SCHOTTKY-BARRIER OR JUNCTION CONTACTS, IN WHICH ALL APERTURES REQUIRED FOR PRODUCTION OF ELECTRODES IN AN INSULATING LAYER COVERING THE SEMICONDUCTOR BODY ARE PRODUCED SIMULTANEOUSLY. A FIELD EFFECT TRANSISTOR IN WHICH THE GATE ELECTRODE SURROUNDS THE DRAIN ELECTRODE IN A LOOP WHILE THE SOURCE ELECTRODE IS SUBDIVIDED AND ITS PARTS ESSENTIALLY SURROUND THE GAS ELECTRODE. THE CONTACT LANDS OF THE GATE ELECTRODE ARE ARRANGED ESSENTIALLY OUTSIDE THE REGION OF CAPACITIVE INFLUENCE OF THE SOURCE ELECTRODE. A SEMICONDUCTOR SURFACE IS METALLIZED BY DEPOSITING METAL THROUGH A MASK APERTURE SMALLER THAN THE SURFACE TO BE METALLIZED FOLLOWED BY HEATING TO CAUSE THE METAL TO WET THE SURFACE AND SPREAD OVER THE ENTIRE SURFACE.

公开(公告)号：DE1927955A1

公开(公告)日：1970-01-02

申请号：DE1927955

申请日：1969-05-31

Applicant: IBM

Inventor： MIDDELHOEK SIMON ,  SASSO GIOVANNI

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/285 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L11/14

公开(公告)号：GB1262758A

公开(公告)日：1972-02-09

申请号：GB2999669

申请日：1969-06-13

Applicant: IBM

Inventor： MIDDLEHOEK SIMON ,  SASSO GIOVANNI

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/285 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00

Abstract: 1,262,758. Field effect transistors. INTERNATIONAL BUSINESS MACHINES CORP. 13 June, 1969 [28 June, 1968], No. 29996/69. Heading H1K. [Also in Division C7] A gold electrode is vapour deposited through an aperture in a SiO 2 layer on a drain area 3 of a silicon FET device through a mask of smaller area than the drain area, and the device heated at, e.g. 500‹ C. to diffuse the gold over the whole drain area. A layer of Cr may be provided on each side of the gold, and the whole covered with sputtered SiO 2 . A Ni layer may be provided between the Cr and the Au.

公开(公告)号：DE1966841A1

公开(公告)日：1974-08-08

申请号：DE1966841

申请日：1969-05-31

Applicant: IBM

Inventor： MIDDELHOEK SIMON ,  SASSO GIOVANNI

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/285 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L7/00

公开(公告)号：CA881789A

公开(公告)日：1971-09-21

申请号：CA881789D

Applicant: IBM

Inventor： SASSO GIOVANNI ,  MIDDELHOEK SIMON

公开(公告)号：CA873591A

公开(公告)日：1971-06-15

申请号：CA873591D

Applicant: IBM

Inventor： MIDDELHOEK SIMON ,  SASSO GIOVANNI