公开(公告)号：AT439682T

公开(公告)日：2009-08-15

申请号：AT02754741

申请日：2002-06-04

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS ,  SCHONENBERG KATHRYN

IPC: H01L21/331 ,  H01L21/265 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/10 ,  H01L29/737

Abstract: A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region (16), the sub-collector region (14), the extrinsic base regions (29), and the collector-base junction region (27). In a preferred embodiment each of the aforesaid regions include C implants.