公开(公告)号：CA922024A

公开(公告)日：1973-02-27

申请号：CA57611

申请日：1969-07-22

Applicant: IBM

Inventor： DUFFY M C ,  YEH TSU-HSING ,  SCHUMANN P A JR

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.