公开(公告)号：JP2001242630A

公开(公告)日：2001-09-07

申请号：JP2001002614

申请日：2001-01-10

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  CATHERINA BABICHI ,  ALFRED GRILL ,  SCOTT DAVID HALLE ,  AAPAN PURAVIN MAHOROWARA ,  VISHUNUBUHAI VITTARUBUAI PATEL

IPC: G03F7/11 ,  C23C16/30 ,  C23C16/32 ,  G02B1/10 ,  G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic structure with plural layers including an RCHX layer containing a material of the formula R:C:H:X (where R is one selected from the group comprising Si, Ge, B, Sn, Fe, Ti and a mixture of these and X is absent or one selected from the group comprising O, N, S and F) as at least one layer and with a layer of an energy active material, a method for producing the structure and a method for utilizing the structure. SOLUTION: The RCHX layer is formed by vapor deposition, the energy active material is patterned to form a pattern and this pattern is transferred to the RCHX layer. The RCHX layer is useful as a hard mask layer, an antireflection layer and a hard mask/antireflection layer.