公开(公告)号：JP2004241771A

公开(公告)日：2004-08-26

申请号：JP2004020523

申请日：2004-01-28

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CASEY JON A ,  BALZ JAMES G ,  BERGER MICHAEL ,  COHEN JEROME ,  HENDRICKS CHARLES ,  INDYK RICHARD ,  LAPLANTE MARK ,  LONG DAVID C ,  MAIORINO LORI A ,  MERRYMAN ARTHUR G ,  POMERANTZ GLENN A ,  RITA ROBERT A ,  SEMKOW KRYSTYNA W ,  SPENCER PATRICK E ,  SUNDLOF BRIAN R ,  SURPRENANT RICHARD P ,  WALL DONALD R ,  WASSICK THOMAS A ,  WILEY KATHLEEN M

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/12 ,  H01L23/498 ,  H05K1/03 ,  H05K3/00 ,  H05K3/22

CPC classification number: H05K3/225 ,  H01L21/4846 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/4629 ,  H05K2203/173 ,  Y10T29/49124 ,  Y10T29/49135 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a multilayer ceramic correction process which forms a new electric correction path for connecting top vias. SOLUTION: A correction path 65 is provided between a defect net 40 and a redundancy correction net 45 in a multilayer ceramic substrate. The defect net and the correction net are terminated at top vias 41 and 46 of the substrate. The defect net is electrically isolated from an electric correction structure by the use of laser, and a post-burning circuit is formed on and in the substrate. In addition, the passivation of an electric correction line 65 is performed. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：WO2011043869A3

公开(公告)日：2011-06-03

申请号：PCT/US2010046268

申请日：2010-08-23

Applicant: IBM ,  FAROOQ MUKTA G ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

Inventor： FAROOQ MUKTA G ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L21/02697 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05016 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05187 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/15787 ,  H01L2924/04953 ,  H01L2924/01014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Disclosed is a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. In a further embodiment, there may also be an aluminum layer between the insulation layer and copper plug. Also disclosed is a process for making the semiconductor device.

Abstract translation: 公开了一种半导体器件，其中绝缘层具有与器件的最后布线层接触的铜插塞。 还可以存在将铜塞与绝缘层分离的阻挡层。 在另一实施例中，在绝缘层和铜插塞之间也可以有铝层。 还公开了制造半导体器件的方法。

公开(公告)号：GB2486357A

公开(公告)日：2012-06-13

申请号：GB201202913

申请日：2010-08-23

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

IPC: H01L23/532

Abstract: Disclosed is a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. In a further embodiment, there may also be an aluminum layer between the insulation layer and copper plug. Also disclosed is a process for making the semiconductor device.

公开(公告)号：GB2486357B

公开(公告)日：2015-05-27

申请号：GB201202913

申请日：2010-08-23

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

IPC: H01L23/532

Abstract: Disclosed is a semiconductor device wherein an insulation layer has a via opening with an aluminum layer in the via opening and in contact with the last wiring layer of the device. There is a barrier layer on the aluminum layer followed by a copper plug which fills the via opening. Also disclosed is a process for making the semiconductor device.

公开(公告)号：DE112010003936T5

公开(公告)日：2012-08-16

申请号：DE112010003936

申请日：2010-08-23

Applicant: IBM

Inventor： FAROOQ MUKTA ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/52

Abstract: Es wird eine Halbleitereinheit offenbart, wobei eine Isolierungsschicht einen Kupferanschluss in Kontakt mit der letzten Verdrahtungsschicht der Einheit aufweist. Es kann auch eine Barriereschicht vorhanden sein, die den Kupferanschluss von der Isolierungsschicht trennt. Bei einer weiteren Ausführungsform kann auch eine Aluminiumschicht zwischen der Isolierungsschicht und dem Kupferanschluss vorhanden sein. Ferner wird ein Verfahren zum Herstellen der Halbleitereinheit offenbart.