DEFECT RESISTANT BINARY SYNCHRONOUS MARK

    公开(公告)号:JPH11317027A

    公开(公告)日:1999-11-16

    申请号:JP3363099

    申请日:1999-02-12

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To make a synchronization recognizable even when an error is occurred in the detecting of a synchronous pattern by allowing an error resistant binary coded mark to include a coded pattern consisting of fixed plural bits and allowing the coded pattern to be at the maximum Hamming distance from the known pattern connected to the number of bits being in the fixed plural bits. SOLUTION: An error resistant binary coded synchronous mark is written as a fixed length coded pattern being at the maximum Hamming distance from the known VFO pattern connected to the number of bits being in the fixed length pattern to be used by a formatter 45 and it is transmitted to a write channel 32. This synchronous mark is also recorded to an opposite direction at the back of coded data and the recorded synchronous mark must become to be at the maximum pattern distance in the opposite direction from the connected known VFO pattern. As a result, a possibility that any part of synchronous patterns is confused with the VFO pattern is low and when an effective synchronous pattern appears in front of the coded data, the synchronization is recognized at a correct position.

    Writing cache of log structure for data storage device and system
    3.
    发明专利
    Writing cache of log structure for data storage device and system 审中-公开
    数据存储设备和系统的日志结构写入缓存

    公开(公告)号:JP2004213647A

    公开(公告)日:2004-07-29

    申请号:JP2003421669

    申请日:2003-12-18

    CPC classification number: G06F12/0804 G06F12/0866 G06F2212/312

    Abstract: PROBLEM TO BE SOLVED: To enhance performance of a log structure writing cache for a data storage system and the storage system. SOLUTION: There are a RAID (redundant array of independent disks), a magnetic disk, an optical disk and a magnetic tape storage, etc. as the storage system. The writing cache is preferably mounted on a main storage, however, it may be mounted on other storage elements and includes a cache line for temporarily storing written data at a nonvolatile state. Thus, system performance is enhanced by sequentially writing data in a target storage position later. Meta data by every cache line is also held in the writing cache. The meta data includes target sector addresses to each sector in the line and a number indicating an order of data to be written in the cache line. Entry of a buffer table is provided by every cache line. A hash table is used for searching the buffer table by calculating sector addresses required for reading/writing of each piece of data. COPYRIGHT: (C)2004,JPO&NCIPI

    Abstract translation: 要解决的问题:提高数据存储系统和存储系统的日志结构写入高速缓存的性能。 解决方案:存储系统有RAID(独立磁盘冗余阵列),磁盘,光盘和磁带存储等。 写入缓存优选地安装在主存储器上,然而,其可以安装在其他存储元件上,并且包括用于在非易失性状态下临时存储写入数据的高速缓存行。 因此,通过在稍后的目标存储位置中顺序写入数据来提高系统性能。 每个高速缓存行的元数据也保存在写入高速缓存中。 元数据包括行中每个扇区的目标扇区地址和指示要写入高速缓存行的数据顺序的数字。 缓存表的输入由每条缓存行提供。 哈希表用于通过计算读取/写入每个数据所需的扇区地址来搜索缓冲表。 版权所有(C)2004,JPO&NCIPI

Patent Agency Ranking