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公开(公告)号：DE3370663D1
公开(公告)日：1987-05-07
申请号：DE3370663
申请日：1983-03-22
Applicant: IBM
Inventor： BISCHOFF BERNARD KURT , PATRICK WILLIAM JOHN , STRUDWICK THOMAS HYDE
IPC: C30B33/00 , H01L21/322 , C30B29/06
Abstract: A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.
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