公开(公告)号：US3795541A

公开(公告)日：1974-03-05

申请号：US3795541D

申请日：1971-11-26

Applicant: IBM

Inventor： LEE K ,  SAWATZKY E ,  SUITS J

IPC: C22C22/00 ,  C22C28/00 ,  C22C30/00 ,  G03G5/16 ,  H01F1/04 ,  H01F1/047 ,  H01F10/10 ,  H01F10/18 ,  C04B35/00

CPC classification number: G03G5/16 ,  C22C28/00 ,  H01F1/04 ,  H01F10/10

Abstract: A ROOM TEMPERATURE STABLE FERROMGNETIC PERMANENT MAGNET MATERIAL WITH A LARGE FARADAY ROTATION AND HAVING A CURIE TEMPERATURE IN THE REGION OF SUBSTANTIALLY 180-220*C. OF A MUTUAL SOLID SOLUTION HAVING ATOMIC PROPORTIONS INDICATED BY THE FORMULA:

MN.8-1.0AL1.3-1.6GE.8-1.0O0.05-.3

IN THE FILM FORM, THE MAGNETIZATION IS NORMAL TO THE FILM PLANE.

公开(公告)号：US3850690A

公开(公告)日：1974-11-26

申请号：US33540573

申请日：1973-02-23

Applicant: IBM

Inventor： LEE K ,  SUITS J

IPC: C23C26/00 ,  H01F10/12 ,  H01F41/14 ,  H01F10/02

CPC classification number: C23C26/00 ,  H01F10/12 ,  H01F10/265 ,  H01F41/14

Abstract: A method of making ferromagnetic films of MnGaGe upon a substrate, the films crystallizing in the tetragonal structure and having a grain size of less than one-half micron, made by the method of depositing a first layer of either manganese, or gallium and germanium upon a heated substrate, followed by the deposition of the remaining material upon the first layer, and annealing the deposited layers at a desired temperature until a homogeneous composition is achieved, and then cooling of the film-substrate combination. In this manner, with appropriately chosen temperatures, films having a grain size of less than onehalf micron and being particularly usable for storage applications may be fabricated.

Abstract translation: 在衬底上制造MnGaGe的铁磁性膜的方法，通过沉积第一层锰或镓和锗的方法，将膜以四方结构结晶并具有小于半微米的晶粒尺寸的方法 加热的衬底，然后将剩余材料沉积在第一层上，并在所需温度下退火沉积的层，直到达到均匀的组合物，然后冷却膜 - 衬底组合。 以这种方式，在适当选择的温度下，可以制造具有小于半微米的晶粒尺寸并且特别可用于存储应用的膜。

公开(公告)号：BR7707402A

公开(公告)日：1978-07-18

申请号：BR7707402

申请日：1977-11-03

Applicant: IBM

Inventor： RICE R ,  SUITS J ,  NEPELA D

IPC: C22C5/04 ,  C22C19/03 ,  C22C30/00 ,  C22C38/00 ,  C22C38/08 ,  G11B5/31 ,  H01F1/147 ,  H01F10/14 ,  C22C37/00

公开(公告)号：BR7703603A

公开(公告)日：1978-03-21

申请号：BR7703603

申请日：1977-06-02

Applicant: IBM

Inventor： SUITS J

IPC: C22C19/03 ,  H01F1/147 ,  H01F10/14

Abstract: Permalloy type alloys containing rhodium suitable for use in magnetic devices and having improved resistance to corrosion contain from about 65 to 90 atomic percent nickel, 10 to 35 atomic percent iron and 1 to 25 atomic percent rhodium. Magnetic films made of these alloys which contain 1 to 10 atomic percent rhodium exhibit magnetic properties similar to Permalloy while having increased resistance to corrosion.