Intra-block memory wear leveling
    1.
    发明专利

    公开(公告)号:GB2509478B

    公开(公告)日:2016-08-17

    申请号:GB201205097

    申请日:2010-11-29

    Applicant: IBM

    Abstract: A method for intra-block wear leveling within solid-state memory subjected to wear, having a plurality of memory cells includes the step of writing to at least certain ones of the plurality of memory cells, in a non-uniform manner, such as to balance the wear of the at least certain ones of the plurality of memory cells within the solid-state memory, at intra-block level. For example, if a behavior of at least some of the plurality of memory cells is not characterized, then the method may comprise characterizing a behavior of at least some of the plurality of memory cells and writing to at least certain ones of the plurality of memory cells, based on the characterized behavior, and in a non-uniform manner.

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