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公开(公告)号:JP2002163891A
公开(公告)日:2002-06-07
申请号:JP2001348796
申请日:2001-11-14
Applicant: IBM
Inventor: TOWLER FRED J , WISTORT REID A
Abstract: PROBLEM TO BE SOLVED: To provide a match line circuit and match line method for low electric power retrieval in the contents address assignable memory. SOLUTION: Hit is output (emitted) when match line stands from LOW electric level to higher match electric voltage. The Matching voltage is the continuity threshold voltage of N channel field effect transistor(FET), generally is smaller than half of the source power voltage. The circuit and method to cut-off the penetrating current by each unmatch entry, by control signals which are carefully timed at the end of the short period of matching are disclosed.