公开(公告)号：MY113475A

公开(公告)日：2002-03-30

申请号：MYPI19951135

申请日：1995-04-28

Applicant: IBM

Inventor： ROBERT EDWARD FONTANA ,  TSANN LIN ,  CHING HWA TSANG

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01L43/10

Abstract: AN IMPROVED SPIN VALVE (SV) MAGNETORESISTIVE ELEMENT HAS ITS FREE FERROMAGNETIC LAYER (63) IN THE FORM OF A CENTRAL ACTIVE REGION WITH DEFINED EDGES AND END REGIONS THAT ARE CONTIGUOUS WITH AND ABUT THE EDGES OF THE CENTRAL ACTIVE REGION. A LAYER (91) OF ANTIFERROMAGNETIC MATERIAL, PREFERABLY A NICKEL-MANGANESE (NI-MN) ALLOY, IS FORMED ON AND IN CONTACT WITH THE FERROMAGNETIC MATERIAL IN THE END REGIONS FOR EXCHANGE COUPLING WITH THE END REGIONS TO PROVIDE THEM WITH A LONGITUDINAL BIAS OF THEIR MAGNETIZATIONS. THE PINNED FERROMAGNETIC LAYER (70) IN THE SV ELEMENT IS PINNED BY EXCHANGE COUPLING WITH A DIFFERENT LAYER OF ANTI FERROMAGNETIC MATERIAL, PREFERABLY AN IRON-MANGANESE (FE-MN) ALLOY. THIS MATERIAL HAS A SUBSTANTIALLY DIFFERENT NEEL TEMPERATURE FROM THAT OF THE ANTI FERROMAGNETIC MATERIAL ON THE END REGIONS. THE PROCESS FOR MAKING THE SV ELEMENT INCLUDES HEATING TO DIFFERENT PREDETERMINED TEMPERATURES IN THE PRESENCE OF AN APPLIED MAGNETIC FIELD TO ORIENT THE MAGNETIZATIONS OF THE FREE AND PINNED LAYERS IN THE PROPER DIRECTION. THE SV ELEMENT MAY BE USED AS A SENSOR FOR READING DATA IN MAGNETIC RECORDING SYSTEMS.(FIG. 5)

公开(公告)号：SG87173A1

公开(公告)日：2002-03-19

申请号：SG200005495

申请日：2000-09-25

Applicant: IBM

Inventor： TSANN LIN ,  DANIELE MAURI

IPC: G01R33/09 ,  G11B5/012 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  H01F10/00 ,  H01F10/32 ,  H01F41/18 ,  H01L43/08 ,  H01L43/12

Abstract: A trilayer seed layer structure (302) is employed between a first read gap layer (216) and a spin valve sensor (300) for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the spin valve sensor (300), the trilayer seed layer structure(302)is located between a first read gap layer (216) and a ferromagnetic free layer (202). The antiferromagnetic pinning layer (214) is preferably nickel manganese (Ni-Mn). The trilayer seed layer structure includes a first seed layer (SL1) that is a first metallic oxide, a second seed layer (SL2) that is a second metallic oxide and a third seed layer (SL3) that is a nonmagnetic metal. A preferred embodiment is a first seed layer (SL1) of nickel oxide (NiO), a second seed layer (SL2) of nickel manganese oxide (NiMnO x ), and a third seed layer (SL3) of copper (Cu).