-
Patent Agency Ranking
公开(公告)号：US3626257A
公开(公告)日：1971-12-07
申请号：US3626257D
申请日：1969-04-01
Applicant: IBM
Inventor： ESAKI LEO , LUDEKE RUDOLF , TSU RAPHAEL
CPC classification number: H01L47/00 , B82Y20/00 , H01L29/155 , H01L29/157 , H01L33/00 , H01S5/32 , H01S5/34 , H01S5/3425 , H03B9/12 , Y10S148/065 , Y10S148/067 , Y10S148/072 , Y10S148/097 , Y10S148/169
Abstract: The semiconductor device has two highly N-type end portions to which ohmic contacts are made, and a central portion which has a one dimensional spatial periodic variation, in its band-edge energy. This spatial periodic variation, or superlattice, is produced by doping or alloying to form a plurality of successive layers having alternating band-edge energies. The period of the spatial variation is less than the carrier mean free path, and is such as to form in momentum space a plurality of periodic minizones which are much smaller than the Brillouin zones. The device exhibits a bulk negative resistance and is used in oscillator and bistable circuits.
-
公开(公告)号：US3626328A
公开(公告)日：1971-12-07
申请号：US3626328D
申请日：1969-04-01
Applicant: IBM
Inventor： ESAKI LEO , HOWARD WEBSTER E JR , TSU RAPHAEL
CPC classification number: H01L47/00 , B82Y20/00 , H01L29/155 , H01L29/157 , H01S5/30 , H01S5/34 , H01S5/3425 , H03B9/12 , Y10S148/065 , Y10S148/067 , Y10S148/072 , Y10S148/097 , Y10S148/169
Abstract: The semiconductor bulk oscillator includes a body of semiconductor material which includes a superlattice portion across which an electric field is applied. The device responds to this field to produce bulk high-frequency oscillations. The superlattice portion has a one-dimensional periodic spatial variation in its band edge energy produced either by doping or alloying. The periodic variation in band edge energy provides in wave vector space a plurality of minizones which are much smaller than the Brillouin zone. A cavity-type structure is formed transverse to the superlattice portion of the device to extract outputs of electromagnetic energy at high frequencies obtained when an electric field above threshold is applied across the superlattice.
-
-
公开(公告)号：DE2304552A1
公开(公告)日：1973-12-06
申请号：DE2304552
申请日：1973-01-31
Applicant: IBM
Inventor： ESAKI LEO , TSU RAPHAEL
IPC: H03B9/12 , G02F1/35 , G02F1/355 , G02F1/37 , G02F1/39 , H01L47/00 , H01S1/00 , H01S5/00 , H03B19/00 , H03B19/14 , H03B21/00 , H01S3/18
Abstract: The disclosure relates to a device for generating electromagnetic waves which have wavelengths different from an input wavelength to the device. The device consists of man-made superlattice structure fabricated by epitaxial deposition techniques to which at least one electromagnetic wave is applied. The input wave has an electric field component parallel to the longitudinal axis of the superlattice structure. Because of the special characteristic of the superlattice structure, it is possible to obtain as outputs all the odd harmonics of the input wavelength. By applying an electric field parallel to the longitudinal axis of the superlattice, it is possible to obtain both odd and even harmonics of the input wavelength. By switching the electric field, a gating action is obtained. To select the desired harmonic, appropriate filters are used. Mixing as well as harmonic generation is possible with the arrangements disclosed by applying a plurality of input wavelengths which by multiple photon processes produce outputs having relatively long wavelengths compared to the input wavelength. The mixed outputs in both the presence and absence of an applied electric field are obtainable by filtering. Thus, inputs in the visible range may be mixed to provide outputs in the far infrared region which are not easily obtainable using prior art arrangements.
-
公开(公告)号：CA913232A
公开(公告)日：1972-10-24
申请号：CA913232D
Applicant: IBM
Inventor： HOWARD WEBSTER E JR , TSU RAPHAEL , ESAKI LEO
-
-
-
-
Search Results
5
records
(took 0.018 seconds)
