公开(公告)号：FR2337347A1

公开(公告)日：1977-07-29

申请号：FR7639682

申请日：1976-12-22

Applicant: IBM

Inventor： VERKUIL ROGER L

IPC: H01L21/66 ,  G01R31/308 ,  G01R31/26 ,  G01N21/00

Abstract: An inductively coupled oscillator method for inducing eddy currents in a semiconductor PN junction wafer while irradiating said wafer with pulsed light of selected intensity. The oscillator loading due to the pulsed light modulated eddy current losses is monitored and displayed on an oscilloscope in the form of a decay time plot of voltage amplitude, the plot being a function of the pulsed light intensity and the recombination rate of light-induced electrons and holes on each side of the junctions. The leakage characteristics of the junctions which are desired to be measured are one of the factors determining said rate. Leakage characteristic is made the predominant factor by setting the intensity of the pulsed light to a value which produces a nearly straight line decay time plot on the oscilloscope display. The slope of the line then is a measure of the leakage characteristic.

公开(公告)号：CA1079851A

公开(公告)日：1980-06-17

申请号：CA250132

申请日：1976-04-13

Applicant: IBM

Inventor： CURTIS HUNTINGTON W ,  VERKUIL ROGER L

IPC: G11C11/38

Abstract: A novel solid state device which exhibits two-terminal negative resistance characteristics. The negative resistance characteristic may be readily shaped by external bias control, providing a wide range of oscillatory or bistable properties. The negative resistance characteristic is obtained by a novel means of device operation exploiting an electron hole pair multip.ication effect which is enhanced by high substrate doping in conjunction with appropriate biasing of the junctions within the device. The device exhibits a bias voltage controlled small signal negative resistance region, i.e., the device has a unique feature, a negative slope over an adjustable portion of its V-I characteristic. Bistable action is obtained with a single device. In the first stable state ("off") of the device, power dissipation is zero. In the second stable state ("on") of the device, power dissipation is adjustable to less than one micro-watt.

公开(公告)号：CA2146908A1

公开(公告)日：1995-12-31

申请号：CA2146908

申请日：1995-04-12

Applicant: IBM

Inventor： VERKUIL ROGER L

IPC: G01R27/02 ,  G01R27/26 ,  G01R31/265 ,  H01L21/66 ,  G01R27/14 ,  G01R27/28

Abstract: The appts. comprises a device for establishing an amount of junction capacitance of the junction between the desired layer and the underlying substrate, and providing a signal indicative of the junction capacitance. A device generates a point location alternating current (AC) photovoltage between the desired layer and the underlying substrate. The photovoltage has a sinusoidal magnitude and frequency and is propagated radially outward from a point location along the desired layer by a resistive nature of the desired layer at an attenuation and phase shift. The generating device further provides a signal indicative of the AC sinusoidal frequency. A device monitors the attenuation and phase shift of the propagated AC photovoltage as a function of radial distance remote from the point location. The attenuation and phase shift monitoring device provides first and second output signals indicative of a first and a second monitored magnitude and phase at first and second radial distances, respectively. A device is responsive to the junction capacitance signal, the AC sinusoidal frequency signal, and the first and second attenuation and phase shift signals for generating an output signal indicative of a sheet resistance RS of the desired layer according to a prescribed sheet resistance model.

公开(公告)号：FR2307335A1

公开(公告)日：1976-11-05

申请号：FR7605142

申请日：1976-02-17

Applicant: IBM

Inventor： CURTIS HUNTINGTON W ,  VERKUIL ROGER L

IPC: G11C11/35 ,  G11C11/39 ,  G11C11/412 ,  H01L29/78 ,  H01L21/331 ,  H01L21/8247 ,  H01L27/11 ,  H01L29/10 ,  H01L29/417 ,  H01L29/73 ,  H01L29/739 ,  H01L29/788 ,  H01L29/792 ,  H03K3/356 ,  G11C11/40 ,  G11C5/02

Abstract: A novel solid state device which exhibits two-terminal negative resistance characteristics. The negative resistance characteristic may be readily shaped by external bias control, providing a wide range of oscillatory or bistable properties. The negative resistance characteristic is obtained by a novel means of device operation exploiting an electron hole pair multiplication effect which is enhanced by high substrate doping in conjunction with appropriate biasing of the junctions within the device.