LOW CONCENTRATION TRIVALENT CHROMIUM ELECTROPLATING SOLUTION

    公开(公告)号:KR850000620B1

    公开(公告)日:1985-05-01

    申请号:KR790004288

    申请日:1979-12-05

    Applicant: IBM

    Abstract: In a Cr electroplating soln., the source of Cr comprises an equilibrated aq. soln. of Cr(III) thiocyanate complexes. The Cr concn. is up to 0.02 molar. The soln. includes an amino acid as pH buffer, providing at least 1 of the ligands for the complex. Pref. the amino acid is aspartic acid. The ratio of the molar concns. of Cr to thiocyanate is 1:2-1:4. Aspartic acid concn. is ca. 1.25 times that of Cr. The bath gives a deposit of light colour and is also used to plate the initial layer of a thick (above 5 microns) deposit for engineering applications.

    GALVANIC BATH FOR THE CHROME-PLATING

    公开(公告)号:CS214811B2

    公开(公告)日:1982-06-25

    申请号:CS764979

    申请日:1979-11-09

    Applicant: IBM

    Abstract: A very low concentration trivalent chromium plating bath in which the source of chromium is an aqueous solution of a chromium (III)- thiocyanate complex (Cr less than 0.03 M) gives a deposit of unexpectedly light colour. Such a bath is employed to produce thin overcoatings of light coloured chromium and may replace the rinse tank of a first chromium (III)- thiocyanate process which is optimized for efficiency and bath stability rather than colour.

    TRIVALENT CHROMIUM ELECTROPLATING SOLUTION AND INCLUDING THIOCYANATE AND ALKALI METAL SULFATES

    公开(公告)号:CA1195646A

    公开(公告)日:1985-10-22

    申请号:CA372416

    申请日:1981-03-05

    Applicant: IBM

    Abstract: TRIVALENT CHROMIUM ELECTROPLATING SOLUTION INCLUDING THIOCYANATE AND ALKALI METAL SULPHATES A chromium electroplating solution in which the source of chromium comprises an equilibrated aqueous solution of chromium (III) - thiocyanate complexes and which has a supporting electrolyte consisting essentially of potassium sulphate or, preferably, a mixture of potassium and sodium sulphates. Such a solution is employed as the catholyte in a plating bath in which catholyte and anolyte are separated by a cation exchange membrane. This all sulphate bath permits the employment of lead anodes and has high efficiency and a good plating range.

    LOW CONCENTRATION TRIVALENT CHROMIUM ELECTROPLATING SOLUTION AND PROCESS

    公开(公告)号:CA1150185A

    公开(公告)日:1983-07-19

    申请号:CA339759

    申请日:1979-11-13

    Applicant: IBM

    Abstract: A very low concentration (below 0.03 M) trivalent chromium plating bath in which the source of chromium is an equilibrated aqueous solution of a chromium (III) - thiocyanate complex gives a deposit of unexpectedly light colour. Such a bath is employed to produce thin overcoatings of light coloured chromium for decorative applications. The bath and process is also used to plate the initial layer of a thick (greater than 5 micron) deposit for engineering applications, the major part of which is plated from a higher chromium concentration bath. Such thick deposits from a higher concentration bath are more cohesive and smoother when plated over an initial layer from the low concentration bath.

    PROCESS FOR THE DEPOSITION OF THICK CHROMIUM FILMS FROM TRIVALENT CHROMIUM PLATING SOLUTIONS

    公开(公告)号:CA1141328A

    公开(公告)日:1983-02-15

    申请号:CA349997

    申请日:1980-04-16

    Applicant: IBM

    Inventor: VIGAR JAMES M L

    Abstract: A process for plating thick chromium coatings for engineering applications comprises depositing a thin initial layer from a low concentration chromium III/thiocyanate bath and depositing the bulk of the remaining thickness from a relatively higher concentration chromium III/thiocyanate bath. Deposits produced by this two stage process are more cohesive and smoother than those obtainable by plating the entire thickness from the high concentration bath alone.

Patent Agency Ranking