公开(公告)号：JP2000261751A

公开(公告)日：2000-09-22

申请号：JP34981699

申请日：1999-12-09

Applicant: IBM

Inventor： CHAINER TIMOTHY JOSEPH ,  GREENGADE CLAUDE A ,  MOSKWECZ PAUL ANDREW ,  ALLENDRO GABRIEL SUKUROTTO ,  CHARLES P TORRESAA ,  VONGUTFELD ROBERT JACOB

IPC: G06K19/07 ,  G01S17/88 ,  G06K17/00 ,  G06Q40/08 ,  G06T9/00 ,  G09C1/00 ,  H04N1/00 ,  H04N1/32 ,  H04N1/387 ,  H04N5/765 ,  H04N5/781 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To prevent an erroneous image from being displayed by checking at least one identifier corresponding to an object by a receiver, recording an image resulting from an object including at least one identifier, encoding an image and identification information acquired by a camera device together and generating complex data. SOLUTION: A camera 104 acquires the image of an object to obtain a tag 101 by using the camera 104 and is connected functionally to an RF receiver 103 so as to simultaneously inquire about and read the tag 101 by the receiver 103. Further, a compound generator 105 is provided to receive inputs from both the camera 104 and the receiver 103. Especially, tag ID information from the receiver 103 is encoded along a type stamper and other information, such as the focal distance of the camera 104 and hush of a digital image acquired by the camera 104. As a result, the generator 105 generates complex data.

公开(公告)号：DE2309106A1

公开(公告)日：1973-10-31

申请号：DE2309106

申请日：1973-02-23

Applicant: IBM

Inventor： VONGUTFELD ROBERT JACOB

IPC: G11C11/42 ,  G02B27/00 ,  G11B7/00 ,  G11B7/003 ,  G11B7/0045 ,  G11B7/085 ,  G11B7/241 ,  G11B7/243 ,  G11B7/30 ,  G11C13/04 ,  H01L29/86 ,  G11B7/24

Abstract: A method is provided in which information may be written at ultrahigh speed onto a memory material, limited only by the pulse time of a laser beam employed. A semiconductor memory material capable of changing from the crystalline to the amorphous state, each state being stable at ambient conditions, is utilized. Information may be written and stored by exposing discrete portions of the semiconductor material to a high speed pulsed laser wherein said exposed portions are converted from the crystalline to the amorphous state.