公开(公告)号：DE3377874D1

公开(公告)日：1988-10-06

申请号：DE3377874

申请日：1983-06-23

Applicant: IBM

Inventor： GHOSH HITENDRA ,  MURGAI ASHOK ,  WESTDORP WOLFGANG ALFRED

IPC: C30B15/00 ,  C30B15/04 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

公开(公告)号：DE3750382T2

公开(公告)日：1995-03-30

申请号：DE3750382

申请日：1987-03-04

Applicant: IBM

Inventor： KIM KYONG-MIN ,  SMETANA PAVEL ,  WESTDORP WOLFGANG ALFRED

IPC: C30B15/00 ,  C30B15/30 ,  H01L21/18 ,  H01L21/208

Abstract: An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material (12) held in a crucible (10) during the seed crystal pulling and crystal (22) formation step, to cause the molten material (12) to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal (22) pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.

公开(公告)号：DE3750382D1

公开(公告)日：1994-09-22

申请号：DE3750382

申请日：1987-03-04

Applicant: IBM

Inventor： KIM KYONG-MIN ,  SMETANA PAVEL ,  WESTDORP WOLFGANG ALFRED

IPC: C30B15/00 ,  C30B15/30 ,  H01L21/18 ,  H01L21/208

Abstract: An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material (12) held in a crucible (10) during the seed crystal pulling and crystal (22) formation step, to cause the molten material (12) to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal (22) pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.

公开(公告)号：DE2619965A1

公开(公告)日：1976-12-16

申请号：DE2619965

申请日：1976-05-06

Applicant: IBM

Inventor： PATRICK WILLIAM JOHN ,  SCILLA SALVATORE JAMES ,  WESTDORP WOLFGANG ALFRED

IPC: C01B33/02 ,  C01B33/021 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  H01L21/208 ,  B01J17/18 ,  B01J17/40