公开(公告)号：GB2498056A

公开(公告)日：2013-07-03

申请号：GB201221507

申请日：2012-11-29

Applicant: IBM

Inventor： NOWAK EDWARD ,  LOGAN LYNDON RONALD ,  WINSLOW JONATHAN II ,  ROBISON ROBERT RUSSELL

IPC: G01R31/26

Abstract: A method comprises forming diode/resistor devices 202 within an integrated circuit (200 in Figure 10), where each diode/resistor device comprises a diode device and a resistor device integrated into a single structure; measuring resistance of each diode/resistor device; measuring current through each diode/resistor device; and computing response curves for the resistance and the current as a function of variations of characteristics of transistor devices (204 in Figure 10) within the integrated circuit structure and/or variations of manufacturing processes of the transistor devices. The circuit may include partitions (206 in Figure 10). The diode device and resistor device may be independently operable, and may share internal components. An integrated circuit is provided, which comprises a plurality of diode/resistor devices 202, each having a cathode 118 which comprises a resistor device, anodes 114 along sides parallel to the cathode, which together with the cathode comprise a diode device, connections 130 to the ends of the cathode yielding a resistance measure, and connections 128 to the anodes yielding a current measure. The diode device and resistor device may share a diffusion region (116 in Figure 8) of the cathode.

公开(公告)号：GB2498056B

公开(公告)日：2014-05-07

申请号：GB201221507

申请日：2012-11-29

Applicant: IBM

Inventor： NOWAK EDWARD ,  LOGAN LYNDON RONALD ,  WINSLOW JONATHAN II ,  ROBISON ROBERT RUSSELL

IPC: G01R31/26