公开(公告)号：DE2625438A1

公开(公告)日：1977-12-15

申请号：DE2625438

申请日：1976-06-05

Applicant: IBM

Inventor： SCHWUTTKE GUENTER HELMUT ,  YANG YNAG

IPC: H01L21/205 ,  H01L21/318 ,  H01L21/322 ,  H01L29/32 ,  H01L21/304

Abstract: A semiconductor chip which is manufactured with specific defects on one surface. This produces zones with an ordered arrangement of impurities, stacking faults, displacements, holes and other defects which can be reproduced and homogenously kept free. The defects are uniformly distributed across the surface of the chip and have a defined depth. The semiconductor material is made from silicon. The defects are in the form of Hertzian fracture cones and micro-splits. The surface is subjected to impact stressingly by placing a large number of spherically shaped objects on the surfaces which are then vibrated. The vibration frequently corresponds to the natural frequency of the chip.