公开(公告)号：SG155176A1

公开(公告)日：2009-09-30

申请号：SG2009051418

申请日：2007-05-28

Applicant: IBM ,  CHARTERED SEMICONDUCTOR MFG

Inventor： ZHU HUILONG ,  LUO ZHIJIONG ,  CHONG YUNG FU ,  TESSIER BRIAN LEE

Abstract: Methods of stressing a channel of a transistor with a replaced gate and related structures are disclosed. A method may include providing an intrinsically stressed material over the transistor including a gate thereof; removing a portion of the intrinsically stressed material over the gate; removing at least a portion of the gate, allowing stress retained by the gate to be transferred to the channel; replacing (or refilling) the gate with a replacement gate; and removing the intrinsically stressed material. Removing and replacing the gate allows stress retained by the original gate to be transferred to the channel, with the replacement gate maintaining (memorizing) that situation. The methods do not damage the gate dielectric. A structure may include a transistor having a channel including a first stress that is one of a compressive and tensile and a gate including a second stress that is the other of compressive and tensile.

公开(公告)号：SG137804A1

公开(公告)日：2007-12-28

申请号：SG2007036031

申请日：2007-05-28

Applicant: IBM ,  CHARTERED SEMICONDUCTOR MFG

Inventor： ZHU HUILONG ,  LUO ZHIJIONG ,  CHONG YUNG FU ,  TESSIER BRIAN LEE

Abstract: Methods of stressing a channel of a transistor with a replaced gate and related structures are disclosed. A method may include providing an intrinsically stressed material (130) over the transistor (102A, 102B) including a gate (110) thereof; removing a portion of the intrinsically stressed material (130) over the gate (110); removing at least a portion of the gate (110), allowing stress retained by the gate (110) to be transferred to the channel; replacing (or refilling) the gate (110) with a replacement gate (160); and removing the intrinsically stressed material. Removing and replacing the gate (110) allows stress retained by the original gate (110) to be transferred to the channel, with the replacement gate (160) maintaining (memorizing) that situation. The methods do not damage the gate dielectric. A structure may include a transistor having a channel including a first stress that is one of a compressive and tensile and a gate including a second stress that is the other of compressive and tensile.