公开(公告)号：WO02099866A3

公开(公告)日：2003-08-28

申请号：PCT/EP0206916

申请日：2002-06-04

Applicant: IBM ,  COMPANIE IBM FRANCE

Inventor： BALLANTINE ARNE W ,  FALTERMEIER JONATHAN E ,  FLAITZ PHILIP L ,  GILBERT JEFFREY D ,  GLUSCHENKOV OLEG ,  HEENAN CAROL J ,  JAMMY RAJARAO

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/321 ,  H01L21/334 ,  H01L21/8234 ,  H01L29/51

CPC classification number: H01L21/28202 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66181

Abstract: Disclosed is a method to convert a stable silicon nitride film (101)covering a silicon substrate (100) into a stable silicon oxide film (102) with a low content of residual nitrogen in the resulting silicon oxide film. This is achieved by performing the steps of (i)providing a low pressure environment for the silicon nitride fim of between about l.33 X10 Pa(100 Torr) to about 13.3 Pa (0.1 Torr);(ii)introducing hydrogen and oxygen into said low pressure environment; and iii maintaining said low pressure environment at a temperature of about 600°C to about 1200 C° for a predetermined amount of time. This is an unexpectedand unique property of the in situ steam generation process since both silicon nitride and silicon oxide materials are chemically very stable compounds. Application of the claimed method to the art of microelectronic device fabrication, such as fabrication of on-chip dielectric capacitors and metal insulator semiconductor field effect transistors, is also disclosed.

Abstract translation: 公开了一种将覆盖硅衬底（100）的稳定氮化硅膜（101）转换成所得氧化硅膜中残留氮含量低的稳定氧化硅膜（102）的方法。 这通过以下步骤来实现：（i）为约13.3×10 4 Pa（100托）至约13.3Pa（0.1托）的氮化硅膜提供低压环境;（ii）引入氢 和氧气进入所述低压环境; 以及iii将所述低压环境保持在约600℃至约1200℃的温度下一段预定的时间。 这是原位蒸汽产生过程的意想不到的独特性质，因为氮化硅和氧化硅材料都是化学上非常稳定的化合物。 还公开了所要求保护的方法应用于微电子器件制造领域，例如制造片上电介质电容器和金属绝缘体半导体场效应晶体管。

公开(公告)号：JP2011101002A

公开(公告)日：2011-05-19

申请号：JP2010238380

申请日：2010-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG KANGGUO ,  FALTERMEIER JONATHAN E ,  BASKER VEERARAGHAVAN S ,  DORIS BRUCE B

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/26586 ,  H01L21/823431 ,  H01L29/66803 ,  H01L29/785

Abstract: PROBLEM TO BE SOLVED: To provide a reliable process for achieving selectivity for selectively etching spacer/side wall material on fin against spacer/side wall material on a gate stack of finFET structure in an integrated circuit. SOLUTION: A spacer material is deposited in conformal manner on both fin and gate stack. Inclined impurity injection is performed almost parallel to the gate stack so that only the spacer material deposited on the fin is selectively damaged. Thus, such finFET is provided as covers a part of fin of the semiconductor material formed on a substrate and contains a spacer having substantially uniform profile along the length of the gate stack. By a damage caused by inclined injection, the spacer material on the fin can be so etched as has a higher selectivity than the spacer material on the gate stack. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可靠的方法，用于实现在集成电路中在finFET结构的栅叠层上选择性地蚀刻翅片上的间隔件/侧壁材料的隔离物/侧壁材料的选择性。 解决方案：隔板材料以共形方式沉积在散热片和栅极叠层上。 倾斜的杂质注入与栅极堆叠几乎平行地进行，使得仅沉积在鳍上的间隔物被选择性地损坏。 因此，这种finFET被设置为覆盖形成在衬底上的半导体材料的鳍片的一部分，并且包含沿着栅极堆叠的长度具有基本均匀轮廓的间隔物。 由于倾斜注射造成的损伤，翅片上的间隔物材料可以被蚀刻，具有比栅极叠层上的间隔物材料更高的选择性。 版权所有（C）2011，JPO＆INPIT