公开(公告)号：JP2002206033A

公开(公告)日：2002-07-26

申请号：JP2001285671

申请日：2001-09-19

Applicant: IBM ,  ECOLE POLYTECH FEDERALE DE LAU

Inventor： WOLF HEIKO ,  BERNARD ANDRE ,  DELAMARCHE EMMANUEL ,  MICHEL BRUNO ,  STUTZ RICHARD ,  HILBORN JONS G ,  DONZEL CHRISTIAN

IPC: B41K1/02 ,  B41C3/04 ,  B41N1/12 ,  C08F2/00 ,  C08J7/00 ,  C08J7/04 ,  C08J7/12 ,  C08J7/16 ,  G03F7/00 ,  H01L21/288 ,  H05K3/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a silicone elastomer stamp with a hydrophilic surface. SOLUTION: The method for fabricating silicone elastomer stamps with hydrophilic surfaces is provided. The concept of polymer grafting is used to produce the stamps. The stamps thus produced have the great advantage that grafting of a thin hydrophilic polymer on a hydrophobic PDMS surface can render PDMS stamps permanently hydrophilic. With such stamps, it becomes possible to print aqueous or highly polar inks reproducibly over days and weeks.

公开(公告)号：JP2005311356A

公开(公告)日：2005-11-04

申请号：JP2005108749

申请日：2005-04-05

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALLENSPACH ROLF ,  BEDNORZ JOHANNES G ,  MEIJER GERHARD INGMAR ,  LAM CHUNG HON ,  STUTZ RICHARD ,  WIDMER DANIEL

IPC: C23C16/40 ,  G11C11/56 ,  H01L21/02 ,  H01L21/20 ,  H01L21/316 ,  H01L21/8238 ,  H01L21/8246 ,  H01L27/10 ,  H01L45/00

CPC classification number: G11C13/0007 ,  G11C2213/31 ,  H01L21/31691 ,  H01L27/101 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625

Abstract: PROBLEM TO BE SOLVED: To provide a deposition method for a non-volatile resistance switching memory.
SOLUTION: The method for depositing a switching material can be switched between persistent conductive states. The microelectronic device is a non-volatile resistance switching memory comprising the switching material for storing digital information. The method comprises a step of depositing the switching material by a standard CMOS deposition technique at a temperature lower than 400°C.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于非易失性电阻切换存储器的沉积方法。 解决方案：用于沉积切换材料的方法可以在持续导电状态之间切换。 微电子器件是包括用于存储数字信息的开关材料的非易失性电阻切换存储器。 该方法包括通过标准CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。 版权所有（C）2006，JPO＆NCIPI