公开(公告)号：MY131086A

公开(公告)日：2007-07-31

申请号：MYPI20022423

申请日：2002-06-27

Applicant: IBM ,  INFINEON TECH NORTH AMERICA CORP

Inventor： RICHARD A CONTI ,  PRAKASH C DEV ,  DAVID M DOBUZINSKY ,  DANIEL C EDELSTEIN ,  GILL Y LEE ,  KIA-SENG LOW ,  PADRAIC C SHAFER ,  ALEXANDER SIMPSON ,  PETER WRSCHKA

IPC: H01L23/48 ,  H01L21/28 ,  H01L21/316 ,  H01L23/532 ,  H01L29/51

Abstract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