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    3.
    发明专利
    未知

    公开(公告)号：DE102004025111A1

    公开(公告)日：2005-01-27

    申请号：DE102004025111

    申请日：2004-05-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： JAIPRAKASH VENKATACHALAM C ,  ARNOLD NORBERT

    IPC: H01L21/8242 ,  H01L27/108

    Abstract: A memory cell is formed in a memory cell array comprised of a plurality of memory cells arranged in rows and columns. A deep trench structure is formed within a semiconductor substrate and includes at least one conducting region. A patterned bit line structure is formed atop of, and electrically isolated from, the insulating region of the deep trench structure and atop of, but contacting at least part of, regions of the semiconductor substrate. Exposed portions of the semiconductor substrate are etched to form at least one isolation trench adjoining the deep trench structure using the patterned bit line structure as an etch mask. The isolation trench is filled with a dielectric material. A contact region to the conducting region of the deep trench structure is formed within the dielectric material of the isolation trench and is electrically isolated from the bit line structure. A word line structure that connects to the contact region is formed and is at least partly atop of, but electrically isolated from, the bit line structure.

    4.
    发明专利
    未知

    公开(公告)号：DE19842665C2

    公开(公告)日：2001-10-11

    申请号：DE19842665

    申请日：1998-09-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHREMS MARTIN ,  ARNOLD NORBERT

    IPC: H01L21/316 ,  H01L21/8242

    Abstract: Manufacture of a trench capacitor comprises using an insulation collar (168), requires initially preparing a substrate (101) followed by forming a trench (108) in the substrate. A first layer (177) is then provided on the trench wall, and a second layer (178) is provided on the first layer. The trench is filled with a first filler material (152), the latter material then being removed from the top region of the trench to form the collar zone, and then the second layer is removed from the top region of the trench, followed by removing the first filler material from the bottom of the trench. The first layer is then removed from the top region of the trench (108) prior to local oxidation of the top region of the trench in order to create the insulation collar (168). The first and second layers are then removed from the bottom region of the trench, and a dielectric layer (164) is formed in the lower region of the trench and on the inner face of the insulation collar (168). The trench is then filled with a conducting second filler material (161).

    METHOD AND EQUIPMENT FOR LOCATING SPECIFIC OBJECT OF SUBMICRON
    6.
    发明专利
    METHOD AND EQUIPMENT FOR LOCATING SPECIFIC OBJECT OF SUBMICRON 失效

    公开(公告)号：JPH109843A

    公开(公告)日：1998-01-16

    申请号：JP7476497

    申请日：1997-03-27

    Applicant: SIEMENS AG ,  IBM

    Inventor： LEVINE ERNEST ,  ARNOLD NORBERT ,  HUMMLER KLAUS ,  WEILAND RAINER

    IPC: G01B11/00 ,  G01B15/00 ,  G01Q20/02 ,  G01Q30/02 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To locate a microobject in a periodically arranged array precisely and inexpensively by generating pulses corresponding in number to the submicron objects contained in the array and scanning the object and then counting the pulses. SOLUTION: A pulses 30 generated from a scanner 20 are fed to a pulse processor 22 where the pulse 30 is converted through a filter into a rectangular signal depending on the gradient and height of the pulse so that it can be identified easily by means of a counter 24. In case of a large contaminant particle, the counter 24 is fed with a pulse 22a processed to remove the pulse 30. The counter 24 counts the pulses corresponding in number to the objects encountered by the scanner 20 in the X, Y directions and delivers a count 24a to a comparator 26. The comparator 26 compares the pulse count 24a with a preset number for locating the submicron object thus locating the submicron object in an array 10.

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