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    ISOTROPIC ETCH PROCESS FOR TOP PLATE PULL-BACK IN A METAL- INSULATOR- METAL CAPACITOR
    1.
    发明申请
    ISOTROPIC ETCH PROCESS FOR TOP PLATE PULL-BACK IN A METAL- INSULATOR- METAL CAPACITOR 审中-公开
    金属绝缘子金属电容器中顶板回拉的等压蚀刻工艺

    公开(公告)号：WO2004088726A3

    公开(公告)日：2004-11-25

    申请号：PCT/EP2004003540

    申请日：2004-04-02

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM ,  FAYAZ FAZIL MOHAMMED ,  KERST UWE ,  MEZZAPELLE JOSEPH ,  YANG HAINING

    Inventor： FAYAZ FAZIL MOHAMMED ,  KERST UWE ,  MEZZAPELLE JOSEPH ,  YANG HAINING

    IPC: H01L21/02 ,  H01L27/08 ,  H01L29/92

    CPC classification number: H01L28/40 ,  H01L27/0805

    Abstract: A MIM capacitor includes a bottom plate (212), a capacitor dielectric (214) disposed over the bottom plate, and a top plate (216) disposed over the capacitor dielectric. An etch stop material (218) is disposed over the top plate, and the top plate has a width that is less than the width of the etch stop material width. The top plate edges may be pulled back during the removal of the resist (220) used to pattern the top plate, by the addition of chemistries in the resist etch that are adapted to pull-back or undercut the top plate edges (224) beneath the etch stop material.

    Abstract translation: MIM电容器包括底板（212），设置在底板上的电容器电介质（214）和设置在电容器电介质上的顶板（216）。 蚀刻停止材料（218）设置在顶板上方，并且顶板的宽度小于蚀刻停止材料宽度的宽度。 在去除用于图案化顶板的抗蚀剂（220）期间，顶板边缘可以被拉回，通过在抗蚀剂蚀刻中添加适于将下面的顶板边缘（224）拉回或倒下的化学物质 蚀刻停止材料。

    Etching process using c4f8 for silicon dioxide and cf4 for titanium nitride
    3.
    发明专利
    Etching process using c4f8 for silicon dioxide and cf4 for titanium nitride 审中-公开
    使用C4F8对二氧化硅进行蚀刻的方法和用于硝酸钛的CF4

    公开(公告)号：JP2007129219A

    公开(公告)日：2007-05-24

    申请号：JP2006293192

    申请日：2006-10-27

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： MEZZAPELLE JOSEPH

    IPC: H01L21/3065 ,  H01L21/768

    CPC classification number: H01L21/31116 ,  H01L21/76802

    Abstract: PROBLEM TO BE SOLVED: To provide an etching process using C
    4 F
    8 for silicon dioxide and CF
    4 for titanium nitride.
    SOLUTION: The method for etching a dielectric layer and a cap layer over a conductor to expose the conductor includes using a silicon dioxide (SiO
    2 ) etching agent containing octafluorocyclobutane (C
    4 F
    8 ), and a titanium nitride (TiN) etching agent containing tetrafluoromethane (CF
    4 ). The method prevents etching rate from deteriorating, and exhibits reduced electrostatic discharge (ESD) defects.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供用于二氧化硅和CF 4 的用于氮化钛的C 4 8 的蚀刻工艺。 解决方案：用于在导体上蚀刻介电层和覆盖层以暴露导体的方法包括使用含有八氟环丁烷（C 4 ）的二氧化硅（SiO 2 / SB> F 8）和含有四氟甲烷（CF 4 ）的氮化钛（TiN）蚀刻剂。 该方法防止蚀刻速率恶化，并且表现出减少的静电放电（ESD）缺陷。 版权所有（C）2007，JPO＆INPIT

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