公开(公告)号：DE102005008353A1

公开(公告)日：2005-10-20

申请号：DE102005008353

申请日：2005-02-23

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： BROWN STEPHEN L ,  GUPTA ARUNAVA ,  KLOSTERMANN ULRICH ,  PARKIN STUART STEPHEN PAPWORTH ,  RABERG WOLFGANG ,  SAMANT MAHESH ,  TROUILLOUD PHILIP ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00 ,  G11C11/02 ,  G11C11/15 ,  H01L27/22

Abstract: Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

公开(公告)号：DE10342572A1

公开(公告)日：2004-07-22

申请号：DE10342572

申请日：2003-09-15

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： ABRAHAM DAVID W ,  SCHMID JUERG ,  TROUILLOUD PHILIP ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G01Q70/00 ,  G01R31/26 ,  G01R33/09 ,  H01L43/08 ,  B81C1/00 ,  H01L21/66 ,  H01L27/22

公开(公告)号：AT479188T

公开(公告)日：2010-09-15

申请号：AT02807323

申请日：2002-11-15

Applicant: IBM

Inventor： ABRAHAM DAVID ,  TROUILLOUD PHILIP

IPC: G11C11/15 ,  G11C11/18 ,  G11C7/02 ,  G11C7/04 ,  G11C11/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.