公开(公告)号：DE10310080B4

公开(公告)日：2009-05-07

申请号：DE10310080

申请日：2003-03-07

Applicant: IBM ,  QIMONDA AG

Inventor： CHAN KEVIN ,  KULKARNI SUBHASH ,  MATHAD GANGADHARA ,  RANADE RAIJV M

IPC: H01L21/8242 ,  H01L21/308 ,  H01L21/76 ,  H01L21/762 ,  H01L21/768

公开(公告)号：DE10310080A1

公开(公告)日：2003-10-02

申请号：DE10310080

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： CHAN KEVIN ,  KULKARNI SUBHASH ,  MATHAD GANGADHARA ,  RANADE RAIJV M

IPC: H01L21/308 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/76

Abstract: Formation of at least one deep trench structure comprises providing at least one deep trench having sidewalls that extend to a common bottom wall in a substrate surface, each of the deep trenches having initial dimensions that are wider than targeted dimensions for the deep trenches; and forming an epitaxial silicon film on at least some portions of the sidewalls to reduce the initial dimensions of the deep trenches to the targeted dimensions.