公开(公告)号：HK1019774A1

公开(公告)日：2000-02-25

申请号：HK99104858

申请日：1999-10-28

Applicant: IBM ,  SIEMENS CORP

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311 ,  H01L ,  C09K ,  C23F

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.

公开(公告)号：JPH11243085A

公开(公告)日：1999-09-07

申请号：JP32532998

申请日：1998-11-16

Applicant: IBM ,  SIEMENS AG

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To effectively eliminate polymer and via residues from a substrate or a conductive material by setting etching agent composition to solution containing sulfuric acid of specific wt.%, hydrogen peroxide of specific wt.% or ozone of specific ppm, and hydrofluoric acid of specific ppm. SOLUTION: Etching agent composition is set to solution containing sulfuric acid of approximately 0.01-approximately 15 wt.%, hydrogen peroxide of approximately 0.01approximately 20 wt.%, hydrofluoric acid of approximately 0.1-approximately 100 ppm or ozone of approximately 1-approximately 30 ppm, and residues being substantially equal to water. The etching agent composition is made by mixing sulfuric acid solution such as solution of 98 wt.%, hydrogen peroxide solution such as solution of 30 wt.%, and hydrofluoric acid solution such as solution of 49 wt.% together, and by adding water where the sulfuric acid, hydrogen peroxide, and hydrofluoric acid of desired percents are given.

公开(公告)号：DE69820397D1

公开(公告)日：2004-01-22

申请号：DE69820397

申请日：1998-10-12

Applicant: SIEMENS AG ,  IBM

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.

公开(公告)号：DE69820397T2

公开(公告)日：2004-10-28

申请号：DE69820397

申请日：1998-10-12

Applicant: SIEMENS AG ,  IBM

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.