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    3.
    发明专利
    未知

    公开(公告)号：DE1002540B

    公开(公告)日：1957-02-14

    申请号：DEI0009604

    申请日：1954-12-30

    Applicant: IBM DEUTSCHLAND

    Inventor： EMERY RAYMOND WALTER ,  HENLE ROBERT ATHANASIUS

    IPC: H01L29/00 ,  H03K3/35

    Abstract: 790,404. Transistor two-stable state circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 24, 1954 [Dec. 31, 1953], No. 37382/54. Class 40 (6). In a circuit employing a transistor with an auxiliary emitter, input pulses from generator 15 are applied directly to the emitter 1e and over a gate 14 to the auxiliary emitter 1a, the gate being controlled by a connection 13 from the collector 1c. Assuming the transistor to be in the off condition, the collector potential is low and due to the connection 13 the anode of diode 14 is also low. The battery 12 supplies the auxiliary emitter 1a over the resistor 11 and maintains conduction through the base 1b and the potential divider 4, 5 and 6. Diode 14 is thus effectively biased off so that an input positive pulse from generator 15 passes directly to the emitter 1e causing the transistor to pass to the on state. Since the transistor is conducting, the collector potential rises and thus the anode of diode 14. The base 1b becomes negative with respect to earth taking the electrode 1a with it while the emitter 1e is maintained near earth potential by diode 10 conducting. The next positive input pulse passes through diode 14 to electrode 1a taking the base 1b positive, the pulse applied to the emitter 1e being ineffective since the transistor is substantially saturated. The transistor is now cut-off and the circuit restores to its original condition. A capacitor 19 provides a degree of memory, making the component values less critical. Specification 790,403 is referred to.

    4.
    发明专利
    未知

    公开(公告)号：DE1067471B

    公开(公告)日：1959-10-22

    申请号：DEI0009588

    申请日：1954-12-29

    Applicant: IBM DEUTSCHLAND

    Inventor： HENLE ROBERT ATHANASIUS ,  EMERY RAYMOND WALTER

    IPC: H01L29/00 ,  H03F3/14 ,  H03K3/35

    Abstract: 763,166. Transistor circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 24, 1954 [Dec. 31, 1953], No. 37377/54. Class 40(6) In a circuit employing a transistor with asymmetrically conductive base 1a, emitter 1e and collector 1c and an ohmic base 1b the flow of current through the latter is limited to a maximum value. The circuit enables the higher amplification of the asymmetrically conductive base to be realised, while maintaining a high back impedance in the off condition due to the connection over ohmic base 1b. In the off condition with no emitter current, the currents flow through resistor 8 exceeds the ohmic base current so that the diode 7 is conductive and the base 1b is near earth potential. The collector current Ico then lies on the curve 10, Fig. 2, intersecting the load line 12 of resistor 5 and presenting a high impedance. The decrease in back resistance in the off condition, if the auxiliary base alone were used is shown in curve 11. When emitter current flows, an enhanced base current results, increasing until it equals the diode current, whereupon the base 1b is no longer at earth potential and the circuit operates with the auxiliary base electrode giving a higher amplification. The transistor may be of the type described in U.S.A. Specification 2,609,428 is referred to.

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