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    1.
    发明专利
    未知

    公开(公告)号：DE1081502B

    公开(公告)日：1960-05-12

    申请号：DEI0013822

    申请日：1957-10-08

    Applicant: IBM DEUTSCHLAND

    Inventor： HUNTER LLOYD PHILIP

    IPC: G11C19/08 ,  H03K17/84

    Abstract: 951,056. Shift registers. INTERNATIONAL BUSINESS MACHINES CORPORATION. March 7, 1960 [March 6, 1959], No. 36055/63. Divided out of 951, 053. Heading G4C. [Also in Division H3] The subject of this Specification is the same as that of Specification 951,053 but the claims are concerned with a data register including a plurality of anisotropic elements of magnetic material in which binary information recorded in a first element is caused to determine the binary information state of a second element by applying to the latter a magnetic field transverse to its easy axis of magnetisation and a field, derived from the first element, along its easy axis, means being provided to cause a third element to assume the binary state of the second element by applying to the third element a transverse field and a field, derived from the second element, along its easy axis.

    3.
    发明专利
    未知

    公开(公告)号：DE1055131B

    公开(公告)日：1959-04-16

    申请号：DEI0007142

    申请日：1953-04-18

    Applicant: IBM DEUTSCHLAND

    Inventor： HUNTER LLOYD PHILIP

    IPC: C30B9/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/208 ,  H01L21/223 ,  H01L21/24 ,  H01L21/302 ,  H01L29/02

    Abstract: 727,447. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 16, 1953 [April 19, 1952], No. 10411/53. Class 37. [Also in Groups II and XXII] A P-N junction is produced by placing a P-type semi-conductor body in contact with an N-type body of the same basic material and applying heat in a neutral or reducing atmosphere so as to raise the temperature of one body to its melting-point at the junction. In Fig. 1, an N-type body 10 of germanium is placed in a graphite crucible 12 which is then filled with a powder 14 of P-type germanium. The whole is enclosed in a quartz envelope 18 which is evacuated, or contains a neutral or reducing atmosphere such as hydrogen or helium. The powder 14 is heated to about 946‹ C. from above by a radiant heater 16 of graphite so that only the powder and the upper surface of body 10 melt. The mass is then cooled at a controlled rate (e.g. 10‹ per minute down to a temperature of 550‹ C., at which it is maintained for 16 hours) so that the whole mass becomes a single crystal. The process may be repeated to form N-P-N or P-N-P junction blocks. In place of the powder 14, a solid body of P-type material may be used. The P and N portions may be interchanged, and silicon may be used in place of germanium. In an alternative method (Fig. 3) for use with materials such as germanium which expand on freezing, a wafer 10 1 of N-type material is placed in contact with a wafer 141 of P-type material of smaller crosssectional area. Pressure is applied by means of a quartz rod 28 and graphite plates 22 and 24, whereby the melting-point of wafer 14 1 is reduced so that it is slightly below that of wafer 10 1 . The whole, in envelope 18, is then heated by means of coil 161 so that wafer 14, but not wafer 10, just melts, and as the contact area increases the materials freeze again due to the reduction in applied force per unit area. P-N furnace 32 and cover 34 are used to facilitate temperature control. The wafers 10 1 and 14 1 need not be of constant cross-sectional area. A plurality of wafers may be provided, or the operation may be repeated to provide N-P-N or P-N-P junction blocks. Reference is made to the production of P-N junctions by impurity diffusion, and also by withdrawing a seed crystal from a molten mass arranged to have a particular temperature gradient.

    4.
    发明专利
    未知

    公开(公告)号：DE1239731B

    公开(公告)日：1967-05-03

    申请号：DEI0012435

    申请日：1956-11-09

    Applicant: IBM DEUTSCHLAND

    Inventor： HUNTER LLOYD PHILIP

    IPC: G11C11/08

    Abstract: 845,431. Circuits employing bi-stable magnetic elements. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 7, 1956 [Nov. 10, 1955], No. 34049/56. Class 40 (9). [Also in Groups XIX and XXXV] A magnetic core storage element comprises a magnetic core having a central aperture, a first portion of the core being divided into two legs 16, 18 to provide parallel flux paths and each leg bearing an input winding x, y. A second portion of the core is also divided into two legs 20, 22 and a sensing winding S is provided on the leg 22. Windings x and y are such that when negative current pulses are applied to each of them the fluxes in legs 16 and 18 are both upwards and the flux pattern # of Fig. 4a is established. If, now, either of these currents is reversed two localized fluxes # 2 , # 3 (Fig. 4b) are produced. To produce an output pulse in winding S the flux in leg 22 must be reversed and this can only occur when simultaneous similar currents are produced in x and y. Unlike prior art devices the current in x or y no longer has a critical maximum value since excessive current only saturates the left-hand part of the core. In a modification (Fig. 5, not shown) the core has three input winding legs each with its own winding, similar current in all three windings being necessary to switch the core. Storage arrays.-Fig. 6 shows a two-dimensional array of elements provided with x and y windings as before and with a common inhibiting winding z linking either the x or y drive leg so that energization of the z winding z prevents switching of the core. A three-dimensional array may comprise a plurality of such planar arrays superposed, energization of particular x and y windings switching all similarlypositioned cores (i.e. a word line) in the planes, unless the z winding for a particular plane is energized. The x and y windings are energized selectively through a decoding matrix 25 and a pulse driver 26. The decoding matrices or address selecting systems 25 may be in the form of crystal diode matrices, and the pulse drivers may be magnetic cores as disclosed in Specification 789,096, or transistors as disclosed in Specification 828,708. To write a word in the array the x and y windings are pulsed to store a " 1 " unless the inhibit winding z is pulsed when a " 0 " is stored. The z winding is pulsed by a driver 40 triggered by a pulse from a memory buffer register 34 through an " and " gate 36 which is opened during the write cycle by control 38. Information is placed into the register 34 during a read cycle through sense amplifier 30 and " and " gate 32. Other means may feed information to the register 34. Specifications 783,918 and 841,426 also are referred to.

    5.
    发明专利
    未知

    公开(公告)号：DE1102287B

    公开(公告)日：1961-03-16

    申请号：DEI0015763

    申请日：1953-04-18

    Applicant: IBM DEUTSCHLAND

    Inventor： HUNTER LLOYD PHILIP

    IPC: C30B9/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/208 ,  H01L21/223 ,  H01L21/24 ,  H01L21/302 ,  H01L29/02

    Abstract: 727,447. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 16, 1953 [April 19, 1952], No. 10411/53. Class 37. [Also in Groups II and XXII] A P-N junction is produced by placing a P-type semi-conductor body in contact with an N-type body of the same basic material and applying heat in a neutral or reducing atmosphere so as to raise the temperature of one body to its melting-point at the junction. In Fig. 1, an N-type body 10 of germanium is placed in a graphite crucible 12 which is then filled with a powder 14 of P-type germanium. The whole is enclosed in a quartz envelope 18 which is evacuated, or contains a neutral or reducing atmosphere such as hydrogen or helium. The powder 14 is heated to about 946‹ C. from above by a radiant heater 16 of graphite so that only the powder and the upper surface of body 10 melt. The mass is then cooled at a controlled rate (e.g. 10‹ per minute down to a temperature of 550‹ C., at which it is maintained for 16 hours) so that the whole mass becomes a single crystal. The process may be repeated to form N-P-N or P-N-P junction blocks. In place of the powder 14, a solid body of P-type material may be used. The P and N portions may be interchanged, and silicon may be used in place of germanium. In an alternative method (Fig. 3) for use with materials such as germanium which expand on freezing, a wafer 10 1 of N-type material is placed in contact with a wafer 141 of P-type material of smaller crosssectional area. Pressure is applied by means of a quartz rod 28 and graphite plates 22 and 24, whereby the melting-point of wafer 14 1 is reduced so that it is slightly below that of wafer 10 1 . The whole, in envelope 18, is then heated by means of coil 161 so that wafer 14, but not wafer 10, just melts, and as the contact area increases the materials freeze again due to the reduction in applied force per unit area. P-N furnace 32 and cover 34 are used to facilitate temperature control. The wafers 10 1 and 14 1 need not be of constant cross-sectional area. A plurality of wafers may be provided, or the operation may be repeated to provide N-P-N or P-N-P junction blocks. Reference is made to the production of P-N junctions by impurity diffusion, and also by withdrawing a seed crystal from a molten mass arranged to have a particular temperature gradient.

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