公开(公告)号：DE2816949A1

公开(公告)日：1979-10-25

申请号：DE2816949

申请日：1978-04-19

Applicant: IBM DEUTSCHLAND

Inventor： HEUBER KLAUS DIPL ING ,  KLINK ERICH DIPL ING ,  RUDOLPH VOLKER DIPL PHYS DR ,  WIEDMANN SIEGFRIED KURT DIPL I

IPC: G11C11/40 ,  G11C11/411 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/08 ,  H01L27/082 ,  H01L29/73 ,  H03K3/288 ,  H03K19/091 ,  H01L27/04

Abstract: The invention relates to a monolithically integrated semiconductor arrangement with at least one integrated injection logic (I2L) structure including an injection zone and an inverting transistor, the injection zone, and lateral thereto, the transistor base zone of a same first conductivity type being arranged in a semiconductor layer of a second conductivity type, which forms the emitter zone of the transistor, the transistor being completed by a collector zone of the second conductivity type, which is formed in the base zone, and the I2L structure being surrounded at least partly by a separating zone introduced at a predetermined spacing into the semiconductor layer. The injection zone and the transistor base zone in the region of their edges facing each other are extended up to or into the separating zone, while in the region of their remaining edges they are spaced therefrom at the predetermined distance. The invention further relates to a storage arrangement having storage cells including two such I2L structures each which are cross-coupled in the manner of a flip-flop.

公开(公告)号：DE2733615A1

公开(公告)日：1979-02-01

申请号：DE2733615

申请日：1977-07-26

Applicant: IBM DEUTSCHLAND

Inventor： KLEIN WILFRIED ,  KLINK ERICH DIPL ING ,  RUDOLPH VOLKER DIPL PHYS DR ,  WERNICKE FRIEDRICH DIPL ING

IPC: G11C11/41 ,  G11C11/40 ,  G11C11/414 ,  G11C11/416 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H01L27/07 ,  H01L29/47 ,  H01L29/872 ,  G11C11/36 ,  G11C7/00

Abstract: The highly integrated semiconductor device is intended as a separating diode cooperating with selector lines of an integrated memory. The resistor (R) is of pinch-type whose pinch doping region (5) is greater than the cross sectional dimension of the resistor doping region (4). Simultaneously it forms a cathode connection doping region for the Schottky diode (D). Preferably the pinched doping region carries a connection contact (K) for the Schottky diode cathode terminal. This doped region is of identical conductivity as the surrounding semiconductor material (3), but of higher doping rate, sufficient to form an ohmic contact with a metal electrode on the region. On the resistance region (4) outside the pinch doping region is provided a metal contact (A), extending beyond the resistance region. -