公开(公告)号：DE1467085A1

公开(公告)日：1970-02-19

申请号：DE1467085

申请日：1964-07-25

Applicant: IBM DEUTSCHLAND

Inventor： EBERT EKKEHARD ,  IMMENDOERFER MARTIN ,  SPIELMANN WERNER

IPC: C01B31/36 ,  H01L21/00 ,  H01L29/24 ,  B01J17/32

Abstract: SiC crystals are grown epitaxially by heating a SiC base crystal and decomposing thereon a gas mixture containing silanes and hydrocarbons. The gas mixture may include SiH4 and CH4, and may contain an inert carrier gas, e.g. Ar. The gas mixture may contain doping material, e.g. PH3 or (N2 + B2H6) for N-type conductivity, Al(BH4)3 for P-type, or BBr3. The reactants may be heated to 1500-2000 DEG C. The process may be carried out in an apparatus of, e.g. quartz, in which is mounted a graphite or tantalum block supporting the SiC base crystal, which crystal is heated by an induction coil around the apparatus.

公开(公告)号：DE1242972B

公开(公告)日：1967-06-22

申请号：DEJ0025392

申请日：1964-03-06

Applicant: IBM DEUTSCHLAND

Inventor： EBERT EKKEHARD ,  SPIELMANN WERNER

IPC: C04B41/53 ,  H01L21/04 ,  H01L7/62

Abstract: 1,023,749. Etching. INTERNATIONAL BUSINESS MACHINES CORPORATION. Feb. 12, 1965 [March 6, 1964], No. 4795/65. Heading B6J. A body of silicon carbide is etched in a melt of sodium nitrite and sodium dioxide in a ratio of 1 : 1 at a temperature of 400-600‹ C., after first being mechanically smoothed, washed with hydrofluoro-nitric acid and rinsed in distilled water and alcohol.