公开(公告)号：JPH06104171A

公开(公告)日：1994-04-15

申请号：JP24903892

申请日：1992-09-18

Applicant: IBM JAPAN

Inventor： SATO KIMIHIRO ,  NAKASOGI AKIHIRO

IPC: H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To form a resist mask whose reflow effect is fixed without depending on a resist pattern by applying a thin film resist layer all over a resist pattern with a step or a recessed part, by exposing it vertically and by making the thin film resist layer remaining on a vertical wall reflow by heating. CONSTITUTION:A resist material layer applied all over a processing surface 2 is exposed by a reduction projection aligner and then developed to form a resist pattern 1. The resist pattern 1 is provided with a step or a recessed part 5 having a right-angled vertical sidewall 4 to a plane part 3, and set by heating type far ultraviolet ray setting, etc., to form a set resist pattern 6. Then, a thin film resist layer 7 of low viscosity resist is applied all over the surface, exposed by batch exposure in a vertical direction and is developed to make only the thin film resist layer 7 on the vertical wall 4 remain. The remaining thin film resist layer 7 is made to reflow and is formed to a side cross sectional contour with a forward taper or a forward tilt together with the vertical wall 4.