公开(公告)号：JPH06120201A

公开(公告)日：1994-04-28

申请号：JP26991392

申请日：1992-10-08

Applicant: IBM JAPAN

Inventor： UDA MITSURU

IPC: G03F1/68 ,  G03F1/80 ,  G03F7/40 ,  H01L21/306 ,  G03F1/08

Abstract: PURPOSE:To enable application to fine working by controlling side etching, by a method wherein, when a pattern is formed by exposing a resist layer turning to a mask, a half exposed part is arranged on the boundary between an exposed part and an unexposed part in the resist layer. CONSTITUTION:A resist layer 21 is formed on a layer 22 to be worked, and exposed in a pattern 31 containing an exposed part 32, an unexposed part 34, and a half exposed part 33 on the boundary between the exposed part 32 and the unexposed part 34. Then the layer 22 to be worked is subjected to wet etching by using the resist layer 21 as a mask. In the process of the wet etching, the half exposed part 33 in the resist layer 21 is etched and eliminated. For example, by irradiation of light, the pattern 31 of a contact hole is formed on the resist layer 21 arranged on the layer 22 to be worked composed of polyimide. The pattern 31 is formed so as to consist of the completely exposed part 32 at the central part B, and the half exposed part 33 in the peripheral part.

公开(公告)号：JP2548873B2

公开(公告)日：1996-10-30

申请号：JP26991392

申请日：1992-10-08

Applicant: IBM JAPAN

Inventor： UDA MITSURU

IPC: G03F1/68 ,  G03F1/80 ,  G03F7/40 ,  H01L21/306