公开(公告)号：US20250098549A1

公开(公告)日：2025-03-20

申请号：US18468181

申请日：2023-09-15

Applicant: IMEC VZW

Inventor： Robert Miller ,  Jaber Derakhshandeh ,  Anna Herr

IPC: H10N60/80 ,  H01L23/48 ,  H01L25/065 ,  H10N60/01

Abstract: A through-silicon via (TSV) and methods for its manufacture are disclosed. An example TSV includes a core that extends through a substrate along an axis. The core includes a conductive material. The TSV also includes an outer layer that is disposed about the axis. The outer layer is at least partially surrounding the core. The outer layer includes a superconductive material. The TSV additionally includes an insulating layer that electrically insulates the core and the outer layer from one another.