公开(公告)号：JP2001127272A

公开(公告)日：2001-05-11

申请号：JP2000302293

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLER JOSEF DR ,  SELL BERNHARD ,  DIRK SCHUMANN

IPC: H01L21/8242 ,  H01L21/02 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit device having a higher capacitance than a conventional technology, with less required area. SOLUTION: A capacitor is provided on the surface of a substrate 1. A first capacitor electrode comprises a lower part T and a side part S over it. The side part comprises first and second side surfaces, with both side surfaces facing each other while the interval is smaller than the height of the side part. The first side surface is corrugated, with the side surface alternately comprising protruding parts and recessed parts provided along the line on the plane parallel to the substrate surface. A capacitor dielectrics KD is provided on the upper surface of the lower part, on the side opposite to the surface of a substrate and a side part, with a second capacitor electrode F contacting to the capacitor dielectrics KD.