公开(公告)号：DE10053780A1

公开(公告)日：2002-05-16

申请号：DE10053780

申请日：2000-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLDBACH MATTHIAS ,  HAUSDOERFER BASTIAN ,  GRAHL ORTRUN

IPC: H01L21/311

Abstract: The invention relates to a method for structuring a silicon oxide layer. According to said method, a substrate comprising a silicon oxide layer with a mask is provided in a plasma reactor. The silicon oxide layer is exposed to a plasma which is produced from an etching gas containing at least one fluorocarbon compound that is selected from the group consisting of compounds of the empirical formula CxHyFz, wherein x = 1 to 5, y = 0 to 4 and z = 2 to 10. The process is optimised by direct switching between the etching and deposition modes, which is achieved by varying the potential difference between the substrate and the plasma.