公开(公告)号：DE10218955B4

公开(公告)日：2004-09-09

申请号：DE10218955

申请日：2002-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO ,  HAUSMANN ALEXANDER

IPC: G03F7/09

Abstract: Production of a structured layer on a semiconductor substrate comprises forming an N-containing dielectric antireflection layer (3) on the layer (2) to be structured on the substrate (1), forming an N-free SiOx layer (4) on the antireflection layer, forming a photolacquer layer on the SiOx layer, exposing the photolacquer (5) to form a prescribed structure on the photolacquer, developing the photolacquer layer to form a photolacquer structure, and transferring the photolacquer structure to the layer lying underneath to structure the layer. An Independent claim is also included for an alternative process for the production of a structured layer on a semiconductor substrate.

公开(公告)号：DE10218955A1

公开(公告)日：2003-11-13

申请号：DE10218955

申请日：2002-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO ,  HAUSMANN ALEXANDER

IPC: G03F7/09

Abstract: Production of a structured layer on a semiconductor substrate comprises forming an N-containing dielectric antireflection layer (3) on the layer (2) to be structured on the substrate (1), forming an N-free SiOx layer (4) on the antireflection layer, forming a photolacquer layer on the SiOx layer, exposing the photolacquer (5) to form a prescribed structure on the photolacquer, developing the photolacquer layer to form a photolacquer structure, and transferring the photolacquer structure to the layer lying underneath to structure the layer. An Independent claim is also included for an alternative process for the production of a structured layer on a semiconductor substrate.