公开(公告)号：DE102004063560B4

公开(公告)日：2009-01-29

申请号：DE102004063560

申请日：2004-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROTSCHEK THOMAS ,  VANNUCCI NICOLA

IPC: H01L27/08 ,  H01L21/822

公开(公告)号：DE102004063560A1

公开(公告)日：2006-07-20

申请号：DE102004063560

申请日：2004-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROTSCHEK THOMAS ,  VANNUCCI NICOLA

IPC: H01L27/08 ,  H01L21/822

Abstract: Capacitive structure has trench (3) which adjoins to a surface (2) of semiconductor body (1). An adjacent isolation layer (4) is arranged within trench and semiconductor body. Trench adjoins trough zone (6), formed in semiconductor body, from first type of conductivity inversed to second type of conductivity. The trough zone forms second electrode of capacitive structure. An independent claim is also included for: the manufacture of the capacitive structure.