公开(公告)号：DE10211569A1

公开(公告)日：2003-10-09

申请号：DE10211569

申请日：2002-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANCHAVA BAKURI ,  FAZEKAS JOSEF

IPC: G01R31/28 ,  H01L21/66 ,  H01L23/544 ,  H01L23/58

Abstract: An electro-migration test structure has an electrically conductive structure (101) coupled to a first pad (104) and to a second pad (105). An electrically conductive auxiliary structure (102) is coupled to the first pad (104) which is arranged beside the electrically conductive structure (101). An electrically non-conductive zone is arranged between the auxiliary structure (102) and the conductive structure (101), yet during electro-migration in the conductive structure (101), a conductive link between the conductive structure (101) and the conductive auxiliary structure (102) can result despite the non-conductive region. An Independent claim is given for a method of determining electro-migration.

公开(公告)号：DE102006000724A1

公开(公告)日：2007-07-12

申请号：DE102006000724

申请日：2006-01-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHR MICHAEL ,  LANCHAVA BAKURI

IPC: H01L23/055 ,  H01L23/36 ,  H01L23/50

Abstract: The unit (1) has an upper surface (19), and a lower surface (20) comprising a semiconductor chip (3), an electrically conducting cooling body (4), and passage contacts that are partly embedded into a filling layer, such that the passage contacts extend through the filling layer. The contacts are separated from the cooling body through recesses, where the recesses are produced by sawing or milling and filled with an electrically isolating material. A substrate (7) is provided at a lower side of the semiconductor chip that is designed as wire-bond-chip. Independent claims are also included for the following: (1) a method for manufacturing an electronic semiconductor unit (2) a mold spin for manufacturing an electrical semiconductor unit.