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公开(公告)号：DE60122148T2
公开(公告)日：2007-07-05
申请号：DE60122148
申请日：2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN , GUTMAN ALOIS
Abstract: A chemically amplified resist composition that eliminates blob defects when used to produce semiconductor devices comprising: a base polymer with a protected group; a solvent; and a photoacid generator comprising an iodonium salt containing a water-soluble group of a sulphonium group containing a water-soluble group.
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公开(公告)号：DE60122148D1
公开(公告)日：2006-09-21
申请号：DE60122148
申请日：2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN , GUTMAN ALOIS
Abstract: A chemically amplified resist composition that eliminates blob defects when used to produce semiconductor devices comprising: a base polymer with a protected group; a solvent; and a photoacid generator comprising an iodonium salt containing a water-soluble group of a sulphonium group containing a water-soluble group.
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公开(公告)号：DE10314152B4
公开(公告)日：2006-04-13
申请号：DE10314152
申请日：2003-03-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN
IPC: H01L21/768 , G03F7/00 , H01L21/3105 , H01L21/311 , H01L21/316
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公开(公告)号：DE10305617A1
公开(公告)日：2003-10-09
申请号：DE10305617
申请日：2003-02-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUTMANN ALOIS , LU ZHIJIAN , BUTT SHAHID
Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
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公开(公告)号：DE10305617B4
公开(公告)日：2007-04-12
申请号：DE10305617
申请日：2003-02-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUTMANN ALOIS , LU ZHIJIAN , BUTT SHAHID
Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
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Patent Agency Ranking
公开(公告)号：DE102004029007A1
公开(公告)日：2005-02-03
申请号：DE102004029007
申请日：2004-06-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN
IPC: G03F7/26 , G03F7/32 , G03F7/40 , H01L21/302
Abstract: Photoresist patterning defects, such as "kissing" defects, can be reduced by rinsing semiconductor wafers in a surfactant-containing rinse, instead of deionized water, at the end of the development process.
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公开(公告)号：DE69811430T2
公开(公告)日：2003-11-20
申请号：DE69811430
申请日：1998-06-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN
IPC: G03F7/30 , H01L21/027
Abstract: A resist development process includes spinning a resist layer while immersing the resist layer in developer.
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公开(公告)号：DE69811430D1
公开(公告)日：2003-03-27
申请号：DE69811430
申请日：1998-06-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN
IPC: G03F7/30 , H01L21/027
Abstract: A resist development process includes spinning a resist layer while immersing the resist layer in developer.
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公开(公告)号：DE10361384A1
公开(公告)日：2004-07-29
申请号：DE10361384
申请日：2003-12-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LU ZHIJIAN , LIN CHIEH-YU
IPC: G03F7/40 , H01L21/027 , H01L21/311 , H01L21/3213
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公开(公告)号：DE60007208T2
公开(公告)日：2004-11-18
申请号：DE60007208
申请日：2000-03-04
Applicant: INFINEON TECHNOLOGIES AG
Inventor： TOEBBEN DIRK , LEE YONG GILL , LU ZHIJIAN
IPC: G03F7/004 , G03F7/09 , G03F7/11 , G03F7/26 , H01L21/027
Abstract: An ARC that reduces the reflectivity in the resist is described. The ARC comprises first and sections. The first section operates in the absorption mode and the second section reduces the difference in the refractive indices between the resist and first ARC section, thereby improving CD control.
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