公开(公告)号：DE10063600A1

公开(公告)日：2002-07-04

申请号：DE10063600

申请日：2000-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RAVIKUMAR RAMACHANDRAN ,  KRAUSE HOLGER ,  NICHTERWITZ MARION ,  NITSCHKE CHRISTIANE ,  PENNER KLAUS

IPC: C30B33/10 ,  H01L21/306

Abstract: Process for etching a wafer (8) using an aqueous solution of H2SO4 and H2O2 comprises removing a sample from a wafer processing tank (2) at regular intervals; comparing the concentration of HF in the solution in the sample using a comparing unit (9) with a reference value; and acquiring a concentration signal in a dosing pump (4) for the introduction of HF from an HF supply container (3) into the solution or a signal for exposing the wafer to cleaning. An Independent claim is also included for a device for etching a wafer. Preferred Features: Etching of the wafer is carried out in an immersion bath using an HF concentration of 5-50 ppm. The bath has a temperature of 20-60 deg C.