Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"REHLAENDER ROLAND" Page 1

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发明专利
Micro-electronic capacitor structure, comprises primary and secondary conducting layers, and a dielectric layer 未知

公开(公告)号：DE102004040796A1

公开(公告)日：2005-10-20

申请号：DE102004040796

申请日：2004-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTSCHE MARTIN ULRICH , SEIDL HARALD , REHLAENDER ROLAND

IPC: H01L21/02 , H01L21/8239 , H01L27/08 , H01L27/105

Abstract: Micro-electronic capacitor structure (100) comprises a primary conducting layer (101), a dielectric layer (102) and a second conducting layer (103). The dielectric layer consists of a lanthanide or actinide metal oxide.

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