Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"SOELKNER GERALD" Page 1

1.

发明专利
Semiconductor component with two contacting regions, between which is located semiconductor volume, within which can be generated current flow from first to second contacting region, with locally increased current flow cross-section 未知

公开(公告)号：DE102004005084A1

公开(公告)日：2005-08-18

申请号：DE102004005084

申请日：2004-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM , NIEDERNOSTHEIDE FRANZ-JOSEF , SOELKNER GERALD

IPC: H01L29/36 , H01L29/739 , H01L29/74 , H01L29/76 , H01L29/861 , H01L29/868

Abstract: Semiconductor component (1) comprises two contacting regions (2,3), between which is fitted semiconductor volume (4), within which can be generated current flow. From first (L) to second contacting region (3), or vice versa. Semiconductor volume and/or contacting regions are so designed that local current flow cross-section of locally increased current flow, caused by current filamenting, is enlarged, at least in partial regions of semiconductor volume.

2.

发明专利
Semiconductor component, e.g. power metal oxide semiconductor field effect transistor (MOSFET) includes insulator layer formed by laminating oxide layer and oxynitride layer 未知

公开(公告)号：DE102005022391A1

公开(公告)日：2006-11-16

申请号：DE102005022391

申请日：2005-05-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM , SOELKNER GERALD

IPC: H01L29/78 , H01L21/336

Abstract: At least one gate is formed on the semiconductor body through an insulator layer. The insulator layer is comprised of an oxide layer and a oxynitride layer that are laminated together. An independent claim is also included for a semiconductor component manufacturing method.

3.

发明专利
Semiconductor component with pressure contact and its round surround, e.g. high voltage (HV) thyristor for HV rectifier for distribution of electric energy, comprising connecting electrode on one semiconductor side 未知

公开(公告)号：DE10330053A1

公开(公告)日：2005-02-10

申请号：DE10330053

申请日：2003-07-03

Applicant: INFINEON TECHNOLOGIES AG , EUPEC GMBH & CO KG

Inventor： SOELKNER GERALD , BARTHELMES REINER , SCHULZE HANS-JOACHIM

IPC: H01L23/48 , H01L29/74

Abstract: Semiconductor component with pressure contact comprises semiconductor substrate (10) with connecting electrode (12) at one side (101) of substrate. On electrode is deposited plate-shaped, conductive round surround (16) with edge (16A).Round surround is fitted with compressible pressure plate (20). Round surround tapers towards its edge. Preferably round surround contains central section (161) and edge section (162). Deposition face of pressure plate on surround is smaller than that of surround on semiconductor. Independent claims are included for surround for pressure contact.

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