公开(公告)号：US11217529B2

公开(公告)日：2022-01-04

申请号：US16592156

申请日：2019-10-03

Applicant: Infineon Technologies AG

Inventor： Stefan Beyer ,  Marius Aurel Bodea ,  Jia Yi Wong

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

公开(公告)号：US20140227147A1

公开(公告)日：2014-08-14

申请号：US13763404

申请日：2013-02-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Stefan Beyer ,  Dietrich Bonart

IPC: B01L3/00 ,  H01L21/56

CPC classification number: B01L3/502707 ,  B81B2201/051 ,  B81C1/00119 ,  H01L21/56 ,  H01L21/568 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/48091 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A microfluidic device includes a semiconductor chip having a main chip surface. The microfluidic device further includes an encapsulation body embedding the semiconductor chip, the encapsulation body having a main body surface. A microfluidic component extends over the main chip surface and over the main encapsulation body surface and traverses an outline of the main chip surface.

Abstract translation: 微流体装置包括具有主芯片表面的半导体芯片。 微流体装置还包括嵌入半导体芯片的封装体，封装体具有主体表面。 微流体组件在主芯片表面上方并且在主封装体表面上延伸并且穿过主芯片表面的轮廓。

公开(公告)号：US20250105102A1

公开(公告)日：2025-03-27

申请号：US18823912

申请日：2024-09-04

Applicant: Infineon Technologies AG

Inventor： Roman Künstler-Boschke ,  Wen-Mei Lin ,  Stefan Beyer ,  Subaramaniym Senivasan

IPC: H01L23/495 ,  H01L23/00

Abstract: A power semiconductor device includes: a die carrier; a power semiconductor die arranged on the die carrier and having a first side and an opposite second side, the first side facing away from the die carrier and including a first power terminal having a Cu layer and the second side including a second power terminal electrically coupled to the die carrier; a contact clip electrically coupled to the Cu layer of the first power terminal by a solder joint; and a patterned cover layer deposited on the first side of the power semiconductor die. The cover layer surrounds the first power terminal on at least one lateral side. The cover layer is arranged over the Cu layer. The cover layer consists of Al2O3 or SiO2.

公开(公告)号：US10086370B2

公开(公告)日：2018-10-02

申请号：US13763404

申请日：2013-02-08

Applicant: Infineon Technologies AG

Inventor： Stefan Beyer ,  Dietrich Bonart

IPC: B01L3/00 ,  H01L21/56 ,  B81C1/00 ,  H01L23/00

Abstract: A microfluidic device includes a semiconductor chip having a main chip surface. The microfluidic device further includes an encapsulation body embedding the semiconductor chip, the encapsulation body having a main body surface. A microfluidic component extends over the main chip surface and over the main encapsulation body surface and traverses an outline of the main chip surface.