公开(公告)号：WO0241076A3

公开(公告)日：2003-01-03

申请号：PCT/DE0104263

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES AG ,  GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

Inventor： GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

CPC classification number: G03F7/70441 ,  G03F1/29 ,  G03F7/70433

Abstract: According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160 DEG and 200 DEG in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.

Abstract translation: 在掩模上的晶片上要传送开口（1）与辅助开口相关联的（2）。 这些具有优选为160°至200℃底层相移特性相对于所述孔（1）之间，以及一个位于该投影装置的横截面（21）的打印的限制尺寸（31）下方，使得辅助开口（2）本身不将 晶圆是geprintet。 同时提高了空间像的对比度，特别是相关联的晶片上的绝缘或半绝缘的开口（1）。 在一个实施例中，辅助开口（2）具有一个位于上述从开口（1）的投影装置的距离的分辨率极限，但其比用于投影的光的相干长度小。 它们的作用是在光学邻近效应的相位相关的利用率，从而可以在掩模在正方形开口的晶片上产生椭圆结构（1“）设定在一个优选的方向上的辅助开口（2）当被利用（1）。 其结果是在投影，特别Substratkontaktierungsebenen到晶片上的处理窗口的显著放大图。

公开(公告)号：DE10350708A1

公开(公告)日：2005-06-02

申请号：DE10350708

申请日：2003-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRUSS STEFAN ,  VORWERK MANUEL ,  FROEHLICH HANS-GEORG ,  EHRBRECHT RAPHAEL

IPC: G03F7/20 ,  G03F9/00

Abstract: Detection of a translation fault of a wafer scanner in the photo-lithographic structuring of a semiconductor wafer is based on illumination of a resist on the wafer in three illumination fields in specific scanning directions; forming first and second partial structures in each field by photolithographic structuring, such that overlay targets are formed in the second field; and determining the displacement of the partial structures of the overlay targets in the second field. Detection of a translation fault of a wafer scanner in the photo-lithographic structuring of a semiconductor wafer involves: (1) providing a semiconductor wafer with a substrate; (2) applying a resist; (3) aligning the wafer relative to a wafer scanner for illuminating the resist; (4) illuminating the resist with the scanner in a first illumination field (10) in a first scanning direction (24), in a second illumination field (20) in a second scanning direction (26) (opposite to the first scanning direction) and in a third illumination field (10) in the first scanning direction (24); (5) forming a first partial structure (12,12',12'') and a second partial structure (14,14',14'') in each illumination field by photolithographic structuring, such that (a) the first partial structure (12) in the first field and the second partial structure (14') in the second field together form an overlay target (28,32) in the second field (20) and (b) the first partial structure (12'') in the third field and the second partial structure (14') in the second field together form another overlay target (30,34) in the second field; (6) determining the displacement of the partial structures of the overlay targets in the second field; and (7) assessing the translation errors from the values of the displacements.

公开(公告)号：DE102004063522A1

公开(公告)日：2006-03-23

申请号：DE102004063522

申请日：2004-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FROEHLICH HANS-GEORG ,  TEIPEL ANSGAR ,  VORWERK MANUEL

IPC: G03F9/00 ,  G03F7/22

Abstract: A method for correcting structure-size-dependent positioning errors during the photolithographic projection by an exposure apparatus and the use thereof includes providing an exposure apparatus for exposing a plurality of exposure fields and a simulation model of the exposure apparatus for specifying correction values for intra-field errors, providing a first pattern with first structure elements and first measurement marks, which, in the case of a projection, are beset by a first positioning error and a second positioning error dependent on the dimensions and the position in the exposure field, providing a correction function suitable for specifying the first and the second positioning error, determining an average relative positioning error including the first and the second positioning error, calculating correction values for the control of the exposure apparatus, and transmitting the correction values to the exposure apparatus so that subsequent exposures are performed with an improved overlay.