公开(公告)号：WO2004109405A2

公开(公告)日：2004-12-16

申请号：PCT/DE2004001132

申请日：2004-05-27

Applicant: INFINEON TECHNOLOGIES AG ,  SCHWARZL SIEGFRIED ,  WURM STEFAN

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G03F7/20

CPC classification number: B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70983

Abstract: The invention relates to a device for generation of and/or influencing electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements, in particular, for the generation and/or reflection of EUV-radiation for EUV-lithography. According to the invention, a magnetic means (10) for the generation of at least one inhomogeneous magnetic field (11) is provided as means for the targetted screening of at least one surface of the device (1; 5; 12) and/or another component (5; 12) from the charge carriers in the plasma (3). The service life of the device and/or other components is thus increased.

Abstract translation: 本发明涉及一种用于生产和/或用于半导体器件的光刻制造的等离子体的Beinflussung电磁辐射的装置，特别是用于制造和/或EUV辐射的反射的EUV光刻。 （5; 112）的装置的至少一个表面上的根据本发明的，用于产生至少一个非均匀磁场（11）的等离子体的电荷载体靶向筛选的装置的磁铁装置（10）（3）。而且/或另一组件（5 ; 12）。 以这种方式，该装置和/或其它部件的寿命得以提高。

公开(公告)号：WO02095794A3

公开(公告)日：2003-10-16

申请号：PCT/DE0201818

申请日：2002-05-21

Applicant: INFINEON TECHNOLOGIES AG ,  NUETZEL JOACHIM ,  SCHLOESSER TILL ,  SCHWARZL SIEGFRIED ,  WURM STEFAN

Inventor： NUETZEL JOACHIM ,  SCHLOESSER TILL ,  SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: H01L27/10 ,  H01L20060101 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/222 ,  B82Y10/00

Abstract: The aim of the invention is to integrate a capacitor device (40) in the area of a semiconductor memory device while using particularly few process steps. To this end, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) to be provided are to be structured directly underneath or directly above the material area (30) that accommodates the memory elements (20). These electrode devices are to be structured so that at least one portion of the material area (30) that accommodates the memory elements (20) functions as a part of the respective dielectric (45) between the electrode devices (43, 44).

Abstract translation: 用于在具有特别少的工艺步骤的半导体存储器件的区域中的积分电容器装置的提出，要被提供的电容器装置的正下方或正上方的下电极装置和的上部电极装置具有材料区auzubilden存储器元件，使得由至少具有存储器元件材料区域的一部分 作用在电极装置之间的各个介质的至少一部分。

公开(公告)号：WO2005116771A3

公开(公告)日：2006-06-08

申请号：PCT/DE2005000973

申请日：2005-05-26

Applicant: INFINEON TECHNOLOGIES AG ,  SCHWARZL SIEGFRIED ,  WURM STEFAN

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G03F7/20

CPC classification number: G03F7/70575

Abstract: The invention relates to a wavelength selector for the soft X-ray range and/or the extreme ultraviolet range. Said wavelength selector comprises at least two reflectors that are optically connected in series in such a manner that a beam incident on the first reflector runs in a substantially fixed angular correlation with the beam reflected by the last reflector. At least one of the reflectors (M1, M2, M3, M4) has a wavelength-selective area and the angle of incidence (a, a+?) of at least two of the reflectors (M1, M2, M3, M4) can be modified for the purpose of wavelength selection. The invention provides a wavelength selector for the soft X-ray range that can be used in laboratory conditions and that allows in an inexpensive manner to provide soft X-ray radiation or extreme UV radiation of variable frequency, especially in the wavelength range of 10-15nm. The inventive selector can be easily incorporated into existing laboratory installations.

Abstract translation: 本发明涉及一种在软X射线和/或极紫外线区域的波长，所述波长选择器具有被如此光学串联连接的至少两个反射器，其在第一反射器的入射光束的传入从在所述基本固定的角度关系的最后一个反射器反射 光束穿过，其中，所述反射器（M1，M2，M3，M4）的至少一种具有波长选择性的区域和发生率的至少两个反射器（M1，M2，M3，M4）的角度（α，α+β）是用于波长选择的变量。 本发明解决了在波长范围10-15nm的指定适用于实验室工作波长在软X射线范围内，提供可调谐的软X射线或极紫外辐射，特别的问题，廉价地启用和容易插入到现有的实验设备。

公开(公告)号：DE102005063547B4

公开(公告)日：2013-08-29

申请号：DE102005063547

申请日：2005-07-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G03F1/72

Abstract: Verfahren zum Untersuchen einer Lithographiemaske mittels eines elektronischen Mikroskopieverfahrens, wobei die Lithographiemaske ein Substrat (510), einen über dem Substrat (510) angeordneten Bragg-Reflektor (520), eine über dem Bragg-Reflektor (520) angeordnete Pufferschicht (540a; 540b) und eine über der Pufferschicht (540a; 540b) angeordnete Absorberschicht (550a; 550b) aufweist, wobei der Bragg-Reflektor (520) und/oder die Pufferschicht (540a; 540b) und/oder die Absorberschicht (550a; 550b) ein magnetisches Material aufweist, um einen Untersuchungskontrast zu erhöhen.

公开(公告)号：DE10325151B4

公开(公告)日：2006-11-30

申请号：DE10325151

申请日：2003-05-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: H05G2/00 ,  G03F7/20 ,  G21K1/06 ,  H05H1/00 ,  H05H1/24 ,  H05H1/46

Abstract: A device generates and/or influences electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements. For example, the device generates and/or reflects EUV-radiation for EUV-lithography. In a first example, a magnetic means ( 10 ) generates at least one inhomogeneous magnetic field ( 11 ) and is provided as means for the targeted screening of at least one surface of the device ( 1; 5; 12 ) and/or another component ( 5; 12 ) from the charge carriers in the plasma ( 3 ).

公开(公告)号：DE102005033141A1

公开(公告)日：2006-03-23

申请号：DE102005033141

申请日：2005-07-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G02B5/08 ,  G02B1/10 ,  G03F7/20

Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.

公开(公告)号：DE102005013532B4

公开(公告)日：2007-09-13

申请号：DE102005013532

申请日：2005-03-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G03F7/20 ,  C23C16/00 ,  G03F9/00 ,  H01J37/317

Abstract: A method for providing a vacuum isolated environment in a lithography system is disclosed. The method for dechucking a reticle includes providing a mask chamber having one or more vacuum valves for isolating the mask chamber from the lithography system. The one or more vacuum valves are closed to isolate the mask chamber from the rest of the lithography system. After the mask chamber is isolated, an inert gas is provided to the mask chamber to dechuck the reticle.

公开(公告)号：DE102004027347A1

公开(公告)日：2005-12-22

申请号：DE102004027347

申请日：2004-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN

IPC: G03F7/20 ,  G21K1/06

公开(公告)号：DE10245128A1

公开(公告)日：2004-04-08

申请号：DE10245128

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  WURM STEFAN ,  RAU JENSPETER

IPC: G03F7/105 ,  G03F7/004 ,  G03F7/20

Abstract: Photosensitive lacquer (20) comprises a base polymer, a solvent, a photo-active substance which forms an acid under the influence of light, and a fluorescent substance which is surrounded by a material and has fluorescent properties depending on an acid portion containing the surrounding material. An Independent claim is also included for a process for the irradiation of a substrate using the above photosensitive lacquer.

公开(公告)号：DE10125594A1

公开(公告)日：2002-12-05

申请号：DE10125594

申请日：2001-05-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NUETZEL JOACHIM ,  SCHWARZL SIEGFRIED ,  SCHLOESSER TILL ,  WURM STEFAN

IPC: H01L27/10 ,  H01L20060101 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: The aim of the invention is to integrate a capacitor device (40) in the area of a semiconductor memory device while using particularly few process steps. To this end, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) to be provided are to be structured directly underneath or directly above the material area (30) that accommodates the memory elements (20). These electrode devices are to be structured so that at least one portion of the material area (30) that accommodates the memory elements (20) functions as a part of the respective dielectric (45) between the electrode devices (43, 44).